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We use a simultaneous flow of ethylene and hydrogen gases to grow single wall carbon nanotubes by chemical vapor deposition. Strong coupling to the gate is inferred from transport measurements for both metallic and semiconducting tubes. At…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Bakir Babic , Mahdi Iqbal , Christian Schonenberger

Nanogap engineering of low-dimensional nanomaterials, has received considerable interest in a variety of fields, ranging from molecular electronics to memories. Creating nanogaps at a certain position is of vital importance for the…

Mesoscale and Nanoscale Physics · Physics 2017-09-13 Jian Zhang , Ya Deng , Xiao Hu , Jean Pierre Nshimiyimana , Siyu Liu , Xiannian Chi , Pei Wu , Fengliang Dong , Peipei Chen , Weiguo Chu , Haiqing Zhou , Lianfeng Sun

A vertical partial gate carbon nanotube (CNT) field-effect transistor (FET), which is amenable to the vertical CNT growth process and offers the potential for a parallel CNT array channel, is simulated using a self-consistent atomistic…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 Youngki Yoon , James Fodor , Jing Guo

Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap…

Substantial progress on field effect transistors "FETs" consisting of semiconducting single wall carbon nanotubes "s-SWNTs" without detectable traces of metallic nanotubes and impurities is reported. Nearly perfect removal of metallic…

We report on a new computational model to efficiently simulate carbon nanotubebased field effect transistors (CNT-FET). In the model, a central region is formed by a semiconducting nanotube that acts as the conducting channel, surrounded by…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 D. Jimenez , X. Cartoixa , E. Miranda , J. Sune , F. A. Chaves , S. Roche

Full Adder is one of the critical parts of logical and arithmetic units. So, presenting a low power full adder cell reduces the power consumption of the entire circuit. Also, using Nano-scale transistors, because of their unique…

Hardware Architecture · Computer Science 2014-11-11 Ali Ghorbani , Ghazaleh Ghorbani

We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated…

Materials Science · Physics 2009-11-13 Christophe Novembre , David Guerin , Kamal Lmimouni , Christian Gamrat , Dominique Vuillaume

This article presents novel high speed and low power full adder cells based on carbon nanotube field effect transistor (CNFET). Four full adder cells are proposed in this article. First one (named CN9P4G) and second one (CN9P8GBUFF)…

Hardware Architecture · Computer Science 2014-11-11 Mehdi Masoudi , Milad Mazaheri , Aliakbar Rezaei , Keivan Navi

We present a simple and scalable technique for the fabrication of solution processed & local gated carbon nanotube field effect transistors (CNT-FETs). The approach is based on directed assembly of individual single wall carbon nanotube…

Materials Science · Physics 2009-11-13 Paul Stokes , Saiful I. Khondaker

This paper investigates the use of carbon nanotube field effect transistors (CNFETs) for the design of ternary full adder cells. The proposed circuits have been designed based on the unique properties of CNFETs such as having desired…

Emerging Technologies · Computer Science 2017-01-03 Fazel Sharifi , Atiyeh Panahi , Mohammad Hossein Moaiyeri , Keivan Navi

We demonstrate the field-effect transistor (FET) operation of molecularly-thin anatase phase produced through solid state transformation from Ti0.87O2 nanosheets. Monolayer Ti0.87O2 nanosheet with a thickness of 0.7 nm is two-dimensional…

Materials Science · Physics 2017-08-31 S. Sekizaki , M. Osada , K. Nagashio

Traditional silicon binary circuits continue to face challenges such as high leakage power dissipation and large area of interconnections. Multiple-Valued Logic (MVL) and nano devices are two feasible solutions to overcome these problems.…

Emerging Technologies · Computer Science 2018-06-21 Sepher Tabrizchi , Fazel Sharifi , Abdel-Hameed A. Badawy

We have fabricated field effect transistors from carbon nanotubes using a novel selective placement scheme. We use carbon nanotubes that are covalently bound to molecules containing hydroxamic acid functionality. The functionalized…

Materials Science · Physics 2015-07-20 Christian Klinke , James B. Hannon , Ali Afzali , Phaedon Avouris

We report on the preparation of carbon nanotube quantum dots using superconducting electrodes made of niobium. Gate-controllable supercurrents with values of up to 30 nA are induced by the proximity effect. The IV-curves are hysteretic at…

Superconductivity · Physics 2008-09-17 Emiliano Pallecchi , Markus Gaass , Dmitry Ryndyk , Christoph Strunk

Colloidally synthesized nanomaterials are among the promising candidates for future electronic devices due to their simplicity and the inexpensiveness of their production. Specifically, colloidal nanosheets are of great interest since they…

The attachment of well-defined charge transfer agents to the surface of nanomaterials is an efficient strategy to control their charge density and also to tune their optical, electrical, and physicochemical properties. Particularly…

The self-organizing properties of nematic liquid crystals (LC) can be used to template carbon nanotubes (CNTs) on a macroscopic dimension. The nematic director field, coupled to the dispersed CNT long-axis, enables controlled director…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 Rajratan Basu , Germano S. Iannacchione

Organic electrochemical transistors (OECTs) have the potential to revolutionize the field of organic bioelectronics. To date, most of the reported OECTs include p-type (semi-)conducting polymers as the channel material, while n-type OECTs…

We theoretically demonstrate that a dipole layer on the electrode can modulate the transmission properties of nanoscale devices by influencing the contact properties, through first principles simulations on carbon nanotube based field…

Materials Science · Physics 2009-11-11 Li Yang , Jian Wu , Wenhui Duan , Bing-Lin Gu