Related papers: Multiple Functionality in Nanotube Transistors
We present a methodology based on quantum mechanics for assigning quantum conductivity when an ac field is applied across a variable gap between two plasmonic nanoparticles with an insulator sandwiched between them. The quantum tunneling…
Single donors in semiconductor nanostructures represent a key element to develop spin related quantum functionalities in atomic scale devices. Quantum transport through a single Arsenic donor in the channel of a Silicon nano-field effect…
We report finite-bias characteristics of electrical transport through phosphorus donors in silicon nanoscale transistors, in which we observe inelastic-cotunneling current in the Coulomb blockade region. The cotunneling current appears like…
Spin-coherent quantum transport in carbon nanotube magnetic tunnel junctions was investigated theoretically. A spin-valve effect is found for metallic, armchair tubes, with a magneto-conductance ratio ranging up to 20%. Because of the…
Carbon nanotube field-effect transistors with sub 20 nm long channels and on/off current ratios of > 1000000 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 nm to 1.1 nm grown from structured…
Nano-electronic integrated circuit technology is exclusively based on MOSFET transistor due to its scalability down to the nanometer range. On the other hand, Bipolar Junction Transistor (BJT), which provides unmatched analog…
We study a three-terminal setup consisting of a single-level quantum dot capacitively coupled to a quantum point contact. The point contact connects to a source and drain reservoirs while the quantum dot is coupled to a single base…
Linear transport through a single-walled carbon nanotube ring (CNR), pierced by a magnetic field and capacitively coupled to a gate voltage source, is investigated starting from a model of interacting $p_z$-electrons. The dc-conductance,…
We investigate the density and temperature-dependent conductance of graphene nanoribbons with varying aspect ratio. Transport is dominated by a chain of quantum dots forming spontaneously due to disorder. Depending on ribbon length,…
We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization.…
We present first-principles calculations of quantum transport which show that the resistance of metallic carbon nanotubes can be changed dramatically with homogeneous transverse electric fields if the nanotubes have impurities or defects.…
Three types of metallic nanostructures comprising niobium were investigated experimentally; in all three types, electric transport at very low temperatures was governed by Coulomb blockade effects. 1. Thin film strips of niobium could be…
We present self-consistent, non-equilibrium Green's function calculations of the characteristics of short channel carbon nanotube transistors, focusing on the regime of ballistic transport with ohmic contacts. We first establish that the…
Nanoelectronics devices, such as quantum dot systems or single-molecule transistors, consist of a quantum nanostructure coupled to a macroscopic external electronic circuit. Thermoelectric transport between source and drain leads is…
Carbon nanotubes (CNTs) are nonlinear high-Q resonators with strong coupling to single-electron tunneling. We begin by describing several methods to detect the flexural motion of a CNT resonator. Next, we illustrate how single-electron…
Quantum confined devices of three-dimensional topological insulators have been proposed to be promising and of great importance for studies of confined topological states and for applications in low energy-dissipative spintronics and…
Using the transversal vibration resonance of a suspended carbon nanotube as charge detector for its embedded quantum dot, we investigate the case of strong Kondo correlations between a quantum dot and its leads. We demonstrate that even…
We report the realization and characterization of independently controllable tunnel barriers within a carbon nanotube. The nanotubes are mechanically bent or kinked using an atomic force microscope, and top gates are subsequently placed…
This letter reports a charge transfer p-doping scheme which utilizes one-electron oxidizing molecules to obtain stable, unipolar carbon nanotube transistors with a self-aligned gate structure. This doping scheme allows one to improve…
The band gap of a semiconducting single wall carbon nanotube decreases and eventually vanishes leading to metalization as a result of increasing radial deformation. This sets in a band offset between the undeformed and deformed regions of a…