Related papers: Comment on "Multi-phonon Raman scattering in semic…
In our recent paper [Phys. Rev. B 65, 075316 (2002)], the selection rules for the Raman scattering in spherical nanocrystals are analyzed. Here we show, that a physically expedient choice of the coordinate system, related to the…
Multi-phonon Raman scattering in semiconductor nanocrystals is treated taking into account both adiabatic and non-adiabatic phonon-assisted optical transitions. Because phonons of various symmetries are involved in scattering processes,…
The adiabatic theory of resonance one-phonon Raman scattering in semiconductor nanocrystals is revised and extended with perturbative non-adiabatic corrections, given by the Albrecht's B term. This theory is confronted with the…
We treat resonant Raman scattering via the multiphonon exciton transitions in cylindrical quantum dots with a parabolic confinement in the lateral direction and with a finite rectangular interface-barrier confinement in the axial direction.…
A set of theoretical results on infrared absorption and inelastic (Raman) scattering of light in semiconductor quantum dots is reviewed. When it is possible, qualitative comparisons with recent experimental results are presented.
A theoretical model of resonant hyper-Raman scattering by an ensemble of spherical semiconductor quantum dots has been developed. The electronic intermediate states are described as Wannier-Mott excitons in the framework of the envelope…
Selection rules are presented for electron-phonon scattering in GaN with the wurtzite crystal structure. The results are obtained for the interband scattering between the lowest conduction band ($\Gamma$-valley) and the second conduction…
The contribution of interface phonons to the first order Raman scattering in nanocrystals with non spherical geometry is analyzed. Interface optical phonons in the spheroidal geometry are discussed and the corresponding Frohlich-like…
We review the recent developments in electronic Raman scattering measurements of charge nematic fluctuations in iron-based superconductors. A simple theoretical framework of a $d$-wave Pomeranchuk transition is proposed in order to capture…
Raman scattering on phonon--plasmon coupled modes in high magnetic fields is considered theoretically. The calculations of the dielectric function were performed in the long-wave approximation for the semiclassical and ultra-quantum…
Raman scattering from the acoustic phonons confied in si nanocrystals is investigated by a microscopic lattice-dynamical calculation. Polarized and depolarized spectra are found to be rather different, indicated from different acoustic…
We present a detailed calculation of intensities of two-phonon and four-phonon Raman peaks in graphene. Writing the low-energy hamiltonian of the interaction of electrons with the crystal vibrations and the electromagnetic field from pure…
The bosonisation technique is used to calculate the resonant Raman spectrum of a quantum wire with two electronic sub-bands occupied. Close to resonance, the cross section at frequencies in the region of the inter sub-band transitions shows…
Enhancement of optical response with high-index dielectric nanoparticles is attributed to the excitation of their Mie-type magnetic and electric resonances. Here we study Raman scattering from crystalline silicon nanoparticles and reveal…
Ultrafast wavepacket dynamics of electron-phonon-photon systems is studied by numerical calculations. When nonadiabaticity of electron-phonon systems is taken into account, Raman scattering process plays an important role in the dynamics of…
Recent Raman data on diamond and crystalline Si nanopowders are analyzed with the use of a microscopic theory of Raman scattering in ensembles of disordered nonpolar nanocrystals. The large width of the Raman peak in nanoparticles as…
Raman scattering is emerging as a surprising probe of electron topology in quantum materials. It has been used recently to detect and characterize a topological phase transition that accompanies the magnetic transition in Nd$_2$Ir$_2$O$_7$.…
This is a reply to the Comment on 'Spin Decoherence in Superconducting Atom Chips' [arXiv:quant-ph/0610095 (2006)].
We calculate the probabilities of two- and four-phonon Raman scattering in graphene and show how the relative intensities of the overtone peaks encode information about relative rates of different inelastic processes electrons are subject…
The Raman selection rules arise from the crystal symmetry and then determine the Raman activity and polarization of scattered phonon modes. However, these selection rules can be broken in resonant process due to the strong electron-phonon…