Related papers: Strain-induced quantum ring hole states in a gated…
Circularly polarised light opens a gap in the Dirac spectrum of graphene and topological insulator (TI) surfaces, thereby inducing a quantum Hall-like phase. We propose to detect the accompanying edge states and their current by the…
The ground states of electrons in two vertically coupled quantum dots in the presence of an external magnetic field have been studied within the density functional theory. A phase diagram of the transition to the quantum Hall state in…
We present observations of an anisotropic resistance state at Landau level filling factor $\nu=5/2$ in a two-dimensional hole system (2DHS), which occurs for certain values of hole density $p$ and average out-of-plane electric field…
We present a detailed theoretical analysis of the electronic structure of $c$-plane InGaN/GaN quantum wells with indium contents varying between 10\% and 25\%. The electronic structure of the quantum wells is treated by means of an…
We study the quantum entanglement structure of integer quantum Hall states via the reduced density matrix of spatial subregions. In particular, we examine the eigenstates, spectrum and entanglement entropy (EE) of the density matrix for…
Quantum spin Hall insulators (QSHIs), also known as two-dimensional topological insulators, have emerged as an unconventional class of quantum states with insulating bulk and conducting edges originating from nontrivial inverted band…
We analyze the single particle states at the edges of disordered graphene quantum dots. We show that generic graphene quantum dots support a number of edge states proportional to circumference of the dot over the lattice constant. Our…
We theoretically investigate the optical functionality of a semiconducting quantum ring manipulated by two electrostatic lateral gates used to induce a double quantum well along the ring. The well parameters and corresponding inter-level…
The trapping of excitons in a semiconductor quantum well due to a circular symmetric nonhomogeneous magnetic field is studied. The effect of the spin state of the exciton on its trapping energy is analyzed, and the importance of the…
We have calculated band-edge energies for most combinations of zincblende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb and InSb in which one material is strained to the other. Calculations were done for three different geometries, quantum…
Ring geometries have fascinated experimental and theoretical physicists over many years. Open rings connected to leads allow the observation of the Aharonov-Bohm effect, a paradigm of quantum mechanical phase coherence. The phase coherence…
We study localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. We propose a model describing donor and/or acceptor impurities to describe Si dopants. This model shows in-gap bound states and wide…
We study the behavior of the extended states of a two-dimensional electron system in silicon in a magnetic field, B. Our results show that the extended states, corresponding to the centers of different Landau levels, merge with the lowest…
Quantum states cohere and interfere. Quantum systems composed of many atoms arranged imperfectly rarely display these properties. Here we demonstrate an exception in a disordered quantum magnet that divides itself into nearly isolated…
Quantum Hall edge states are the paradigmatic example of the bulk-boundary correspondence. They are prone to intricate reconstructions calling for their detailed investigation at high spatial resolution. Here, we map quantum Hall edge…
Using renormalization-group techniques we analyze equilibrium properties of a large gated quantum dot coupled via a long and narrow channel to a reservoir of electrons. Treating the electrons in the channel as one-dimensional and…
The possibility of a novel type of semiconductor quantum dots obtained by spatially modulating the spin-orbit coupling intensity in III-V heterostructures is discussed. Using the effective mass model we predict confined one-electron states…
We investigate the behavior of spin polarized currents in two-dimensional topological insulators (TI). Stationary solutions inside a HgTe/CdTe quantum well (QW) were obtained by Bernevig-Hughes-Zhang (BHZ) model modified by a electric and…
Using an in-house Schroedinger-Poisson (SP) solver, we investigate the creation of a single hole spin qubit inside a triple-gate triangular silicon fin field effect transistor (Si FinFET) quantum device similar to experimental structures.…
Quantum tunnelling from a tilted, but otherwise periodic potential is studied. Our theoretical and experimental results show that, by controlling the system's parameters, we can engineer the escape rate of a Bose-Einstein condensate to an…