Related papers: Decoherence of electron spin qubits in Si-based qu…
We investigate in detail, using both analytical and numerical tools, the decoherence of electron spins in quantum dots (QDs) coupled to a bath of nuclear spins in magnetic fields or with various initial bath polarizations, focusing on the…
Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally…
The uncontrolled interaction of a quantum system with its environment is detrimental for quantum coherence. In the context of solid-state qubits, techniques to mitigate the impact of fluctuating electric and magnetic fields from the…
We investigate relaxation and dephasing of an electron spin confined in a semiconductor quantum dot and subject to spin-orbit coupling. Even in vanishing magnetic field, B = 0, slow noise coupling to the electron's orbital degree of freedom…
There is growing interest in bismuth-doped silicon (Si:Bi) as an alternative to the well-studied proposals for silicon based quantum information processing (QIP) using phosphorus-doped silicon (Si:P). We focus here on the implications of…
Realistic quantum computing is subjected to noise. A most important frontier in research of quantum computing is to implement noise-resilient quantum control over qubits. Dynamical decoupling can protect coherence of qubits. Here we…
We study electron-phonon interaction induced decoherence between two-electron singlet and triplet states in a semiconductor double quantum dot using a spin-boson model. We investigate the onset and time evolution of this dephasing, and…
Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here, we exploit…
We present a quantum solution to the electron spin decoherence by a nuclear pair-correlation method for the electron-nuclear spin dynamics under a strong magnetic field and a temperature high for the nuclear spins but low for the electron.…
The temperature dependence of electron spin coherence in singly negatively charged (In,Ga)As/GaAs quantum dots is studied by time-resolved Faraday rotation. The decoherence time T2 is constant on a microsecond scale for temperatures below…
Coherent spin states in semiconductor quantum dots offer promise as electrically controllable quantum bits (qubits) with scalable fabrication. For few-electron quantum dots made from gallium arsenide (GaAs), fluctuating nuclear spins in the…
The phonon-induced spin relaxation in a two-dimensional quantum dot embedded inside a semiconductor slab is investigated theoretically. An enhanced relaxation rate is found due to the phonon van Hove singularities. Oppositely, a vanishing…
We study Si:P donor electron spin decoherence due to anisotropic hyperfine (AHF) interaction with the surrounding nuclear spin bath. In particular, we clarify the electron spin echo envelope modulation (ESEEM) in the Si:P system and the…
In many realizations of electron spin qubits the dominant source of decoherence is the fluctuating nuclear spin bath of the host material. The slowness of this bath lends itself to a promising mitigation strategy where the nuclear spin bath…
We analyze spin splitting of the two-dimensional hole spectrum in strained asymmetric SiGe quantum wells (QWs). Based on the Luttinger Hamiltonian, we obtain expressions for the spin-splitting parameters up to the third order in the…
We study decoherence of a quantum dot charge qubit due to coupling to piezoelectric acoustic phonons in the Born-Markov approximation. After including appropriate form factors, we find that phonon decoherence rates are one to two orders of…
An atomistic method of calculating the spin-lattice relaxation times ($T_1$) is presented for donors in silicon nanostructures comprising of millions of atoms. The method takes into account the full band structure of silicon including the…
The relaxation time of a single-electron spin is an important parameter for solid-state spin qubits, as it directly limits the lifetime of the encoded information. Thanks to the low spin-orbit interaction and low hyperfine coupling,…
Understanding and control of the spin relaxation time $T_1$ is among the key challenges for spin based qubits. A larger $T_1$ is generally favored, setting the fundamental upper limit to the qubit coherence and spin readout fidelity. In…
As an ensemble scheme of solid-state NMR quantum computers the extension of Kane's many-qubits silicon scheme based on the array of 31 P donor atoms are spaced lengthwise of the strip gates is considered. The possible planar topology of…