Related papers: Spin-polarized light emitting diode using metal/in…
The recent advent of a new class of magnetic material named as {\it altermagnet} (AM), characterized by a combination of momentum-dependent spin splitting with zero net magnetization, has opened up promising prospects for spintronic…
Itinerant spin polaron and metallic ferromagnetism are theoretically predicted in the Mott insulator in semiconductor moir\'e superlattices doped below and above half filling of the narrow moir\'e band, respectively. The existence of spin…
Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of {\alpha}-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs…
We have investigated the variation of induced ferroelectric polarization under magnetic field with various directions and magnitudes in a staggered antiferromagnet Ba$_2$CoGe$_2$O$_7$. While the ferroelectric polarization cannot be…
Half-metallic Heusler alloy compounds with Curie temperatures above room temperature are suitable candidate electrode materials for injecting large spin-polarised charge carriers into the semiconducting barriers at the ferromagnet…
In an inhomogeneously doped magnetic semiconductor, an interplay between an equilibrium magnetization and injected nonequilibrium spin leads to the spin-voltaic effect--a spin analogue of the photo-voltaic effect. By reversing either the…
A strong influence of illumination and electric bias on the Curie temperature and saturation value of the magnetization is demonstrated for semiconductor structures containing a modulation-doped p-type Cd0.96Mn0.04Te quantum well placed in…
A theory of spin-polarized electron transport in ferromagnet/semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductor structures, is developed. The aim is to provide…
We develop a Monte Carlo model to study injection of spin-polarized electrons through a Schottky barrier from a ferromagnetic metal contact into a non-magnetic low-dimensional semiconductor structure. Both mechanisms of thermionic emission…
A systematic investigation of spin injection behavior in Au/FM (FM = Fe and Ni) multilayers is performed using the superdiffusive spin transport theory. By exciting the nonmagnetic layer, the laser-induced hot electrons may transfer spin…
The injection of spin currents in semiconductors is one of the big challenges of spintronics. Motivated by the ultrafast demagnetisation and spin injection into metals, we propose an alternative femtosecond route based on the laser…
Light-emitting diodes are of importance for lighting, displays, optical interconnects, logic and sensors. Hence the development of new systems that allow improvements in their efficiency, spectral properties, compactness and integrability…
The intrinsic spin-dependent transport properties of two types of lateral VS2|MoS2 heterojunctions are systematically investigated using first-principles calculations, and their various nanodevices with novel properties are designed. The…
The theoretical possibility to use an electron microscope as a spin polarizer is studied. It turns out that a Bessel beam passing a standard magnetic objective lens is intrinsically spin polarized. In the limit of infinitely small detectors…
We analyze spin-dependent transport through a spin-diode in the presence of spin-flip and under influence of temperature bias. The current polarization and the spin accumulation are investigated in detail by means of reduced density matrix.…
Non-resonant circularly polarized electromagnetic radiation can exert torques on magnetization by the Inverse Faraday Effect (IFE). Here we discuss the enhancement of IFE by spin-orbit interactions (SOI). We illustrate the principle by…
We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor. Current and electron density spin-polarizations are discussed as functions of barrier energy…
We investigate spin-polarized inter-band tunneling through measurement of (Ga,Mn)As based Zener tunnel diode. By placing the diode under reverse bias, electron spin polarization is transferred from the valence band of p-type (Ga,Mn)As to…
We propose a nanodevice for single-electron spin initialization. It is based on a gated planar semiconductor heterostructure with a quantum well and with potentials generated by voltages applied to local gates. Initially we insert an…
Electron tunneling between superconductors and normal metals has been used for an efficient refrigeration of electrons in the latter. Such cooling is a non-linear effect and usually requires a large voltage. Here we study the electron…