We propose a nanodevice for single-electron spin initialization. It is based on a gated planar semiconductor heterostructure with a quantum well and with potentials generated by voltages applied to local gates. Initially we insert an electron with arbitrary spin into the nanodevice. Next we perform a sequence of spin manipulations, after which the spin is set in a desired direction (e.g., the growth direction). The operations are done all-electrically, do not require any external fields and do not depend on the initial spin direction.
Cite
@article{arxiv.1707.09056,
title = {All-electric single electron spin initialization},
author = {S. Bednarek and J. Pawłowski and M. Górski and G. Skowron},
journal= {arXiv preprint arXiv:1707.09056},
year = {2017}
}