Related papers: A Model for the Voltage Steps in the Breakdown of …
The control of the electronic properties of materials via the vacuum fields of cavity electromagnetic resonators is one of the emerging frontiers of condensed matter physics. We show here that the enhancement of vacuum field fluctuations in…
The creation of topologically non-trivial matter across electronic, mechanical, cold-atom, and photonic platforms is advancing rapidly, yet understanding the breakdown of topological protection remains a major challenge. In this work, we…
We construct a nonlinear fluctuating hydrodynamic effective field theory for Galilean-invariant quantum Hall systems with spontaneously broken translational symmetry. Neglecting the role of energy conservation in a low-temperature regime,…
The dephasing rate of an electron level in a quantum dot, placed next to a fluctuating edge current in the fractional quantum Hall effect, is considered. Using perturbation theory, we first show that this rate has an anomalous dependence on…
The integer and fractional quantum Hall states are known to break down at high dc bias, exhibiting deviation from the ideal incompressible behavior. We measure breakdown of the \nu = 2, 3, 4, 5 integer and the \nu = 4/3 and 5/3 fractional…
Integer and fractional quantum Hall effects were studied with different physics models and explained by different physical mechanisms. In this paper, the common physical mechanism for integer and fractional quantum Hall effects is studied,…
The quantum Hall effect is one of the most important developments in condensed matter physics of the 20th century. The standard explanations of the famous integer quantized Hall plateaus in the transverse resistivity are qualitative, and…
A two-dimensional array of quantum dots in a magnetic field is considered. The electrons in the quantum dots are described as unitary random matrix ensembles. The strength of the magnetic field is such that there is half a flux quantum per…
We investigate dynamical scaling properties in the integer quantum Hall effect for non-interacting electrons at zero temperature, by means of the frequency-induced peak broadening of the dissipative longitudinal conductivity…
We report quantum Hall effect breakdown of a local filling factor v_local = 1 state formed in a bulk v_bulk = 2 system in an AlGaAs/GaAs heterostructure. When a finite source-drain bias is applied across the local system, the breakdown…
The quantum Hall effect realizes a quantized Hall resistance $R_{xy} = h/(\nu e^2)$ whereas the longitudinal resistance vanishes. The quantized value consists of the fundamental physical quantities, the elementary charge $e$ and the Planck…
In this report we experimentally probe the non-equilibrium breakdown of the quantum Hall state in monolayer graphene by injecting a high current density ($\sim$1A/m). The measured critical currents for dissipationless transport in the…
An intriguing observation on the quantum anomalous Hall effect (QAHE) in magnetic topological insulators (MTIs) is the dissipative edge states, where quantized Hall resistance is accompanied by nonzero longitudinal resistance. We…
We study the fractional quantum Hall effect in a bilayer with charge-distribution imbalance induced, for instance, by a bias gate voltage. The bilayer can either be intrinsic or it can be formed spontaneously in wide quantum wells, due to…
A bilayer electron system in a strong magnetic field at low temperatures, with total Landau level filling factor nu =1, can enter a strongly coupled phase, known as the (111) phase or the quantum Hall pseudospin-ferromagnet. In this phase…
We have analyzed the breakdown of the quantum Hall effect in 1 micrometer wide Hall devices fabricated from an exfoliated monolayer graphene transferred on SiOx. We have observed that the deviation of the Hall resistance from its quantized…
We present a simple classification of the different liquid and solid phases of quantum Hall systems in the limit where the Coulomb interaction between the electrons is significant, i.e. away from integral filling factors. This…
Within the framework of the path-integral approach we study the quantum vortex creep for the situation where both the Hall and the dissipative dynamics are simultaneously present. We calculate the relaxation rate and the crossover…
Quantum vortex tunneling is studied for the case where the Hall and the dissipative dynamics are simultaneously present. For a given temperature, the magnetization relaxation rate is calculated as a function of the external current and the…
We report on the influence of voltmeters on measurements of the longitudinal resistance in the quantum Hall effect regime. We show that for typical input resistances for standard digital lock-in amplifiers the longitudinal resistance can…