Related papers: Towards quantum well hot hole lasers
A detailed rate-equation-based model is developed to study carrier transport effects on optical and electrical characteristics of the Multiple Quantum Well Heterojunction Bipolar Transistor Laser in time-domain. Simulation results extracted…
We suggest to use InAs/GaSb coupled quantum wells for THz lasing. In these heterostructures THz lasing is based not on intersubband but on interband transitions. Crucial advantages of this design in comparison with intersubband lasers are…
Following the success of p-Ge hot-hole lasers, there is also potential for using other semiconductor materials, notably III-V's such as GaAs and InSb. Previous analysis had suggested that a large effective mass ratio between the heavy and…
We report on a new design of terahertz quantum cascade laser based on a single, potential-inserted quantum well active region. The quantum well properties are engineered through single monolayer InAs inserts. The modeling is based on…
: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based THz quantum cascade laser. In this paper, we combine…
We study the rapid decrease of peak gain in resonant-phonon THz Quantum Cascade Lasers with increasing temperature. The effect of various microscopic scattering processes on the gain profile as a function of temperature is discussed. We…
We outline here how strong light-matter interaction can be used to induce quantum phase transition between normal and topological phases in two-dimensional topological insulators. We consider the case of a HgTe quantum well, in which band…
We present the metamorphosis in the effective-potential profile of layered heterostructures, for several III-V semiconductor binary compounds, when the band mixing of light and heavy holes increases. A root-locus-like procedure, is directly…
Compact Free-Electron Lasers (FELs) offering broad, continuous spectral tunability are traditionally constrained by fixed-parameter magnetic structures and the necessity for high-energy electron beams. High-gain Harmonic Lasing (HL) has…
Terahertz (THz) lasers on optically pumped multiple-graphene-layer (MGL) structures as their active region are proposed and evaluated. The developed device model accounts for the interband and intraband transitions in the degenerate…
We develop the microscopic theory of a terahertz (THz) laser based on the effects of resonant tunneling in a double quantum well heterostructure embedded in both optical and THz cavities. In the strong coupling regime the system hosts…
We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by…
Although the interaction of a flat-foil with currently available laser intensities is now considered a routine process, during the last decade emphasis is given to targets with complex geometries aiming on increasing the ion energy. This…
We analyze the modification of the intersubband absorption of electrons in quantum wells under intense THz irradiation. An expression for the induced current is obtained, based on the adiabatic approach and the resonant approximation. We…
Tunnel-injection lasers promise various advantages in comparison to conventional laser designs. In this paper, we present a theoretical analysis for the physics of the tunnel-injection process in quantum-dot based laser devices. We describe…
The quiet quantum environment of holes in solid-state devices has been at the core of increasingly reliable architectures for quantum processors and memories.1-6 However, due to the lack of scalable materials to properly tailor the valence…
Broadband ultrashort terahertz (THz) pulses can be produced using plasma generation in a noble gas ionized by femtosecond two-color pulses. Here we demonstrate that, by using multiple-frequency laser pulses, one can obtain a waveform which…
Using a microscopic theory based on the Maxwell-semiconductor Bloch equations, we investigate the possibility of an optically-assisted electrically-driven THz quantum cascade laser. Whereas in optical conversion schemes the power conversion…
We propose and substantiate the concept of terahertz (THz) laser enabled by the resonant electron radiative transitions between graphene layers (GLs) in double-GL structures. We estimate the THz gain for TM-mode exhibiting very low Drude…
Several methods have been proposed in the literature to improve Free Electron Laser output by transforming the electron phase-space before entering the FEL interaction region. By utilising `beam by design' with novel undulators and other…