Related papers: Mesoscopic proximity effect in double barrier Supe…
We investigate the current-voltage characteristics of high-transparency superconductor-insulator-normal metal (SIN) junctions with the specific tunnel resistance below 30 kOhm per square micron. The junctions were fabricated from different…
Spin filter superconducting S/I/N tunnel junctions (NbN/GdN/TiN) show a robust and pronounced zero bias conductance peak at low temperatures, the magnitude of which is several times the normal state conductance of the junction. Such a…
Using an approach based on quasiclassical Green's functions we present a theoretical study of transport in mesoscopic S/N structures in the diffusive limit. The subgap conductance in S/N structures with barriers (zero bias and finite bias…
We observe a maximum in the conductance of Aluminum / n-GaAs junctions at temperatures 20 mK lower than the superconducting transition temperature. This is the first observation of a non- monotonic behavior of the conductance near the…
We measured the low temperature subgap resistance of titanium nitride (superconductor, Tc=4.6K)/highly doped silicon (degenerated semiconductor) SIN junctions, where I stands for the Schottky barrier. At low energies, the subgap conductance…
Experiments on hybrid superconducting normal-metal structures have revealed that even in the absence of tunnel junctions the onset of superconductivity can lead to a decrease in the electrical conductance by an amount many orders of…
The current-voltage characteristics of Au/InOx/Pb tunnel junctions exhibit peculiar zero-bias anomalies. At low temperature the zero-bias resistance attains values that are smaller than the normal state resistance by a factor that often…
We have investigated the effect of a difference in the tunnelling resistances of the individual normal metal-insulator-superconductor (NIS) tunnel junctions in a double junction SINIS device, with particular emphasis on the impact on the…
We investigate the phenomenon of reflectionless tunneling in ballistic normal-metal--superconductor (NS) structures, using a semiclassical formalism. It is shown that applied magnetic field and superconducting phase difference both impair…
Measurements of conductance spectra in a superconductor - topological insulator - normal metal thin film junctions of NbN-$\rm Bi_2Se_3$-Au are reported. Junctions with ex-situ and in-situ prepared $\rm NbN-Bi_2Se_3$ interfaces were…
This letter presents experiments on junctions fabricated by a new technique that enables the use of high quality aluminum oxide tunnel barriers with normal metal electrodes at low temperatures. Inverse proximity effect is applied to…
We have measured the very low temperature (down to 30 mK) subgap resistance of Titanium Nitride (Superconductor, Tc = 4.6 K)/highly doped Silicon (Semiconductor) SIN junction (the insulating layer stands for the Schottky barrier). As the…
Low temperature transport measurements on superconducting film - normal metal wire - superconducting film (SNS) junctions fabricated on the basis of 6 nm thick superconducting polycrystalline PtSi films are reported. The structures with the…
We theoretically investigate the transport properties of a normal-insulator-superconductor (NIS) junction of silicene in the thin barrier limit. Similar to graphene the tunneling conductance in such NIS structure exhibits an oscillatory…
We show that in contrast to conventional normal metal-insulator-superconductor (NIS) junctions, the tunneling conductance of a NIS junction in graphene is an oscillatory function of the effective barrier strength of the insulating region,…
We investigate the tunneling conductance of superconductor-insulator-normal metal (SIN) and superconductor-insulator-superconductor (SIS) heterostructures with one superconducting side of the junction that is electrically driven and can…
We study the sub-gap conductance of a ferromagnetic mesoscopic region attached to a ferromagnetic and a superconducting electrode by means of tunnel junctions. In the absence of the exchange field, the ratio $r= \gamma / \epsilon_T$ of the…
The impact of junction transparency in driving phase-coherent charge transfer across diffusive semiconductor-superconductor junctions is demonstrated. We present conductivity data for a set of Nb-InAs junctions differing only in interface…
We have developed a technique to fabricate sub-micron, 0.6 um x 0.6 um Al-AlOx-Nb tunnel junctions using a standard e-beam resist, angle evaporation and double oxidation of the tunneling barrier, resulting in high quality niobium, as…
We report the development of superconducting tantalum nitride (TaN$_{x} $) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO$_{x}$ and TaO$_{x}$ (Cu-AlO$_{x}$-Al-TaN$_{x} $ and…