Related papers: Two Dimensional Quantum Mechanical Modeling of Nan…
In this work, we have implemented an accurate machine-learning approach for predicting various key analog and RF parameters of Negative Capacitance Field-Effect Transistors (NCFETs). Visual TCAD simulator and the Python high-level language…
We develop in detail a new formalism [as a sequel to the work of T. Champel and S. Florens, Phys. Rev. B 75, 245326 (2007)] that is well-suited for treating quantum problems involving slowly-varying potentials at high magnetic fields in…
Statistics of closed paths in two-dimensional systems, which just determines the interference quantum correction to conductivity and anomalous magnetoconductance, has been studied by computer simulation of a particle motion over the plane…
Spatial confinement and manipulation of charged carriers in semiconducting nanostructures are essential for realizing quantum electronic devices. Gate-defined nanostructures made of two-dimensional (2D) semiconducting transition metal…
In this review article, we present a non-equilibrium quantum transport theory for transient electron dynamics in nanodevices based on exact master equation derived with the path integral method in the fermion coherent-state representation.…
We review two algorithmic advances that bring us closer to reliable quantum simulations of model systems in high energy physics and beyond on noisy intermediate-scale quantum (NISQ) devices. The first method is the dimensional expressivity…
In the present work, we have investigated the performances of L shaped Vertical broken bandgapheterostructureInSb InAsn-channel tunnel field effect transistors TFETs of 4 nm thin channel structures with the gate lengths of 20nm. We have…
A graphene field effect transistor, where the active area is made of monolayer large-area graphene, is simulated including a full 2D Poisson equation and a drift-diffusion model with mobilities deduced by a direct numerical solution of the…
Several equations used to model and characterize the linear region IV characteristics of nanoscale field-effect transistors are derived. The meaning of carrier mobility at the nanoscale is discussed by defining two related quantities, the…
We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by the physical gate oxide thickness and not the effective oxide…
In this work, we extend the analysis of interacting bosons at 2D-1D dimensional crossover for finite size and temperature by using field-theory approach (bosonization) and quantum Monte Carlo simulations. Stemming from the fact that finite…
The recent progress in nanosheet transistors has established two-dimensional (2D) semiconductors as viable candidates for future ultra-scaled electronic devices. Next to reducing contact resistance, identifying good gate dielectrics is a…
We present detailed simulations addressing recent electronic interference experiments, where a metallic gate is used to locally modify the Fermi wave-length of the charge carriers. Our numerical calculations are based on a solution of the…
This study employs advanced phase-field modeling to investigate Si-based qubit MOSFETs, integrating electrostatics and quantum mechanical effects. We adopt a comprehensive modeling approach, utilizing full-wave treatment of the Schrodinger…
Tunneling field-effect transistors (TFETs) based on 2D materials are promising steep sub-threshold swing (SS) devices due to their tight gate control. There are two major methods to create the tunnel junction in these 2D TFETs: electrical…
The nonstationary and steady-state transport through a mesoscopic sample connected to particle reservoirs via time-dependent barriers is investigated within the reduced density operator method. The generalized Master equation is solved via…
A new compact modeling approach is presented which describes the full current-voltage (I-V) characteristic of high-performance (aggressively scaled-down) tunneling field-effect-transistors (TFETs) based on homojunction direct-bandgap…
Quantum simulations of photoexcited low-dimensional systems are pivotal for understanding how to functionalize and integrate novel two-dimensional (2D) materials in next-generation optoelectronic devices. First principles predictions are…
In this paper, physics-based analytical models using two-dimensional (2D) Poisson equations for surface potential, channel potential, electric field, and drain current in AlN/$\beta$-Ga$_2$O$_3$ high electron mobility transistor (HEMT) is…
In this paper we present a new multi-scale simulation scheme for next-generation electronic design automation for nano-electronics. The scheme features a combination of the first-principles quantum mechanical calculation, semi-classical…