Related papers: Two Dimensional Quantum Mechanical Modeling of Nan…
We investigate the controllability of quantum electrons trapped in a two-dimensional device, typically a MOS field-effect transistor. The problem is modeled by the Schr\"odinger equation in a bounded domain coupled to the Poisson equation…
We have performed numerical modeling of dual-gate ballistic n-MOSFET's with channel length of the order of 10 nm, including the effects of quantum tunneling along the channel and through the gate oxide. Our analysis includes a…
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we…
A simulation methodology for ultra-scaled InAs quantum well field effect transistors (QWFETs) is presented and used to provide design guidelines and a path to improve device performance. A multiscale modeling approach is adopted, where…
We investigate the thermoelectric performance of 2D nanojunctions with gate tunable architectures and varying channel lengths from 3 to 12 nm using a combination of first principles simulations, including density functional theory, DFT with…
Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process.…
Two-dimensional materials-based field-effect transistors (2DM-FETs) exhibit both ambipolar and unipolar transport types. To physically and compactly cover both cases, we put forward a quasi-Fermi-level phase space (QFLPS) approach to model…
The latest field-effect transistors are entering the regime where quantum effects within the conduction channel can play a significant role because of the increasingly reduced dimensions. We investigate the effects of quantized states in…
We study the transport properties of deeply scaled monolayer MoS2 n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic quantum transport simulations with an atomistic tight-binding Hamiltonian…
In this article, we combine the modified electrostatics of a one-dimensional transistor structure with a quantum kinetic formulation of Coulomb interaction and nonequilibrium transport. A multi-configurational self-consistent Green's…
Superconducting accelerator magnets require sophisticated monitoring and means of protection due to the large energy stored in the magnetic field. Numerical simulations play a crucial role in understanding transient phenomena occurring…
We have developed a simulation system for nanoscale high-electron mobility transistors, in which the self-consistent solution of Poisson and Schr\"odinger equations is obtained with the finite element method. We solve the exact set of…
Understanding of the electroluminescence (EL) mechanism in optoelectronic devices is important for further optimization of their efficiency and effectiveness. Here, a quantum mechanical approach is formulated for modeling EL processes in…
We present a methodology based on quantum mechanics for assigning quantum conductivity when an ac field is applied across a variable gap between two plasmonic nanoparticles with an insulator sandwiched between them. The quantum tunneling…
Quantum nanosystems involve the coupled dynamics of fermions or bosons across multiple scales in space and time. Examples include quantum dots, superconducting or magnetic nanoparticles, molecular wires, and graphene nanoribbons. The number…
In this paper we have developed a two dimensional (2D) analytical model for surface potential and drain current for a long channel Dual Material Gate (DMG) Silicon-on-Insulator (SOI) Tunneling Field Effect Transistor (TFET). This model…
We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors based on two-dimensional (2D) materials. The electrostatics along the electrolyte-gated 2D-semiconductor stack is treated by solving the Poisson…
Simulations of quantum transport in coherent conductors have evolved into mature techniques that are used in fields of physics ranging from electrical engineering to quantum nanoelectronics and material science. The most efficient…
In the present work, we have investigated the quantum transport in n Si junction less nanowire field effect transistors using 3 D, full band atomistic sp3d5s spin orbital coupled tight binding method. We have investigated the IDS VGS…
Some of the most promising candidates for next generation thermoelectrics are nanocomposites due to their low thermal conductivities that result from phonon scattering on the boundaries of the various material phases. However, in order to…