Related papers: Tunneling-assisted impact ionization fronts in sem…
We study the spin polarization of tunneling holes injected from ferromagnetic GaMnAs into a p-doped semiconductor through a tunneling barrier. We obtain an upper limit to the spin injection rate. We find that spin-orbit interaction…
We consider tunnel ionization of an atom or molecule in a strong field within an analytical treatment of the R-matrix method, in which an imaginary boundary is set up inside the classically forbidden region that acts as a source of ionized…
We propose a quantum interference spin-injector nanodevice consisting of a superconductor-normal metal hybrid loop connected to a superconductor-ferromagnet bilayer via a tunneling junction. We show that for certain values of the applied…
We present a model for implementing fast entangling gates (${\sim}1~\mu$s) with ultra-fast pulses in arbitrarily long ion chains, that requires low numbers of pulses and can be implemented with laser repetition rates well within…
An ionization-induced plasma grating can be formed by spatially selective ionization of gases by the interference of two intersecting ultra-short laser pulses. The density modulation of a plasma grating can approach unity since the plasma…
We propose a new and simple strategy for controlled ionization-induced trapping of electrons in a beam-driven plasma accelerator. The presented method directly exploits electric wakefields to ionize electrons from a dopant gas and capture…
We show that the interplay between chiral tunneling and spin-momentum locking of helical surface states leads to spin amplification and filtering in a 3D Topological Insulator (TI). Chiral tunneling across a TI pn junction allows normally…
The "pushing gate" proposed by Cirac and Zoller in 2000 for quantum logic in ion traps is discussed, in which a force is used to give a controlled push to a pair of trapped ions and thus realize a phase gate. The original proposal had a…
We propose to use a frequency doubled pulse colliding with the driving pulse at an acute angle to trigger ionization injection in a laser wakefield accelerator. This scheme effectively reduces the duration that injection occurs, thus high…
The proposal of generating high quality electron bunches via ionization injection triggered by an counter propagating laser pulse inside a beam driven plasma wake is examined via two-dimensional particle-in-cell simulations. It is shown…
Conversion of heat into a spin-current in electron doped silicon can offer a promising path for spin-caloritronics. Here we create an electron spin polarization in the conduction band of n-type silicon by producing a temperature gradient…
We consider tunnel ionization of atomic argon in a femtosecond laser pulse of intensity $10^{21}-10^{22}{\rm W/cm}^2$ aiming to investigate the relativistic dynamics and radiation of photoelectrons released from their parent ions inside the…
This paper concerns the theory of non-recollisional ionization or detachment of atoms or ions by intense few-cycle pulses. It is shown that in certain conditions of pulse duration, peak intensity and carrier-envelope phase, the ionization…
A chirped laser pulse focused by a chromatic lens exhibits a dynamic, or "flying," focus in which the trajectory of the peak intensity decouples from the group velocity. In a medium, the flying focus can trigger an ionization front that…
Ionization injection is attractive as a controllable injection scheme for generating high quality electron beams using plasma-based wakefield acceleration. Due to the phase dependent tunneling ionization rate and the trapping dynamics…
We present a fast phase gate scheme that is experimentally achievable and has an operation time more than two orders of magnitude faster than current experimental schemes for low numbers of pulses. The gate time improves with the number of…
Half-cycle picosecond pulses have been produced from thin photo-conductors, when applying an electric field across the surface and switching on conduction by a short laser pulse. Then the transverse current in the wafer plane emits…
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…
A novel regime is proposed where, employing linearly polarized laser pulses at intensities $10^{21}\textrm{Wcm}^{-2}$ as two order of magnitude lower than earlier predicted [T. Esirkepov et al., Phys. Rev. Lett. 92, 175003 (2004)], ions are…
We review the semiclassical two-step model for strong-field ionization. The semiclassical two-step model describes quantum interference and accounts for the ionic potential beyond the semiclassical perturbation theory. We discuss…