Related papers: Spin relaxation of conduction electrons in bulk II…
Electron spin relaxation in bulk III-V semiconductors is investigated from a fully microscopic kinetic spin Bloch equation approach where all relevant scatterings, such as, the electron--nonmagnetic-impurity, electron-phonon,…
The electron spin relaxation times in a system of electrons interacting with piezoelectric phonons mediated through spin-orbit interactions were calculated using the formula derived from the projection-reduction method. The results showed…
The influence of temperature and transport conditions on the electron spin relaxation in lightly doped n-type GaAs semiconductors is investigated. A Monte Carlo approach is used to simulate electron transport, including the evolution of…
We study spin relaxation in n-type bulk GaAs, due to the Dyakonov--Perel mechanism, using ensemble Monte Carlo methods. Our results confirm that spin relaxation time increases with the electronic density in the regime of moderate electronic…
Electron spin relaxation caused by the D'yakonov-Perel' mechanism is investigated theoretically in asymmetrical A$_3$B$_5$ heterostructures. The total spin relaxation anisotropy is demonstrated for a wide range of structure parameters and…
We calculate the spin relaxation time of conduction electrons in n-doped bulk gallium arsenide. We consider the Elliot-Yafet spin-relaxation mechanism, driven by Coulombic-impurity and electron-electron scattering. We find that these two…
Spin relaxation is investigated theoretically in two-dimensional systems. Various semiconductor structures of both n- and p-types are studied in detail. The most important spin relaxation mechanisms are considered. The spin relaxation times…
We study the electron spin relaxation in intrinsic and $p$-type (001) GaAs quantum wells by constructing and numerically solving the kinetic spin Bloch equations. All the relevant scatterings are explicitly included, especially the…
The mechanisms for spin relaxation in semiconductors are reviewed, and the mechanism prevalent in p-doped semiconductors, namely spin relaxation due to the electron-hole exchange interaction, is presented in some depth. It is shown that the…
Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity related to the metal-to-insulator transition (MIT) is…
We investigate electron spin relaxation in $p$-type GaAs quantum wells from a fully microscopic kinetic spin Bloch equation approach, with all the relevant scatterings, such as the electron-impurity, electron-phonon, electron-electron…
We comment on the conclusion by Teng et al. [J. Phys. D: Appl. Phys. {\bf 42}, 135111 (2009)] that the Bir-Aronov-Pikus mechanism is more important than the D'yakonov-Perel' mechanism at high carrier density in intrinsic bulk GaAs. We point…
We report a large and unexpected suppression of the free electron spin relaxation in lightly-doped n-GaAs bulk crystals. The spin relaxation rate shows weak mobility dependence and saturates at a level 30 times less then that predicted by…
The electron spin relaxation in $n$-type and intrinsic GaAs$_{1-x}$Bi$_x$ with Bi composition $0\le x \le 0.1$ is investigated from the microscopic kinetic spin Bloch equation approach. The incorporation of Bi is shown to markedly decrease…
The D'yakonov-Perel' spin relaxation induced by the spin-orbit interaction is examined in disordered two-dimensional electron gas. It is shown that, because of the electron-electron interactions different spin relaxation rates can be…
A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin…
We perform a full microscopic investigation on the spin relaxation in $n$-type (001) GaAs quantum wells with Al$_{0.4}$Ga$_{0.6}$As barrier due to the D'yakonov-perel' mechanism from nearly 20 K to the room temperature by constructing and…
We calculate the spin relaxation time of mobile electrons due to spin precession between random impurity scattering (D'yakonov-Perel' mechanism) in electrically gated bilayer graphene analytically and numerically. Due to the trigonal…
Electron spin dynamics in InAs/GaAs heterostructures consisting of a single layer of InAs (1/3$\sim$1 monolayer) embeded in (001) and (311)A GaAs matrix was studied by means of time-resolved Kerr rotation spectroscopy. The spin relaxation…
The mechanisms that determine spin relaxation times of localized electrons in impurity bands of n-type semiconductors are considered theoretically and compared with available experimental data. The relaxation time of the non-equilibrium…