Related papers: Weak localization in InSb thin films heavily doped…
Ta (100 nm) / NdFeB (5 $\mu$m) / Ta (100 nm) films have been deposited onto Si substrates using triode sputtering (deposition rate ~ 18 $\mu$m/h). A 2-step procedure was used : deposition at temperatures up to 400 C followed by ex-situ…
High quality vanadium sesquioxide V2O3 films (170-1100 {\AA}) were grown using the pulsed laser deposition technique on (0001)-oriented sapphire substrates, and the effects of film thickness on the lattice strain and electronic properties…
Pb-free ferroelectric thin films are gaining attention due to their applicability in memory, sensor, actuator, and microelectromechanical system. In this work, Na$_{0.4}$K$_{0.1}$Bi$_{0.5}$TiO$_3$ (NKBT0.1) ferroelectric thin films were…
A systematic study of the resistivity and Hall effect in single crystal Nd{2-x}Ce{x}CuO{4-d} films (0.12 < x < 0.20) is presented, with special emphasis on the low-temperature dependence of the normal state conductance. Two-dimensional weak…
The magnetization of thin films of cobalt ferrite frequently falls far below the bulk value of 455 kAm-1, which corresponds to an inverse cation distribution in the spinel structure with a significant orbital moment of about 0.6 muB that is…
Thin epitaxial films of Tb metal were grown on a clean W(110) substrate in ultra-high vacuum and studied in-situ by low-energy electron microscopy. Annealed films present magnetic contrast in spin-polarized low-energy electron microscopy.…
Thin films of the pyrochlore iridates along the [111] direction have drawn significant attention to investigate exotic correlated topological phenomena. Here, we report the fabrication of Eu$_2$Ir$_2$O$_7$ thin films via reactive solid…
We describe and discuss the low-temperature resistivity (and the temperature-dependent inelastic scattering rate) of several different doped 2D semiconductor systems from the perspective of the Planckian hypothesis asserting that…
Recently, it has been theoretically predicted that Cd3As2 is a three dimensional Dirac material, a new topological phase discovered after topological insulators, which exhibits a linear energy dispersion in the bulk with massless Dirac…
Superconducting Nb3Sn films were fabricated on sapphire and fine grain Nb substrates by magnetron sputtering from a single stoichiometric Nb3Sn target. The structural, morphological and superconducting properties of the films annealed for…
Epitaxial SrTi1-xVxO3 thin films with thicknesses of ~16 nm were grown on (001)-oriented LSAT substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT)…
Thin films of the superconductor YBa$_2$Cu$_3$O$_{7-\delta}$ (YBCO) were modified by low-energy light-ion irradiation employing collimated or focused He$^+$ beams, and the long-term stability of irradiation-induced defects was investigated.…
We present measurements of the electrical resistivity, $\rho$, in epitaxial Cr films of different thicknesses grown on MgO (100) substrates, as a function of temperature, $T$. The $\rho(T)$ curves display hysteretic behavior in certain…
MXenes stand out from other 2D materials because they combine very good electrical conductivity with hydrophilicity, allowing cost-effective processing as thin films. Therefore, there is a high fundamental interest in unraveling the…
We report a super-insulating behavior, in a device having granular Pb film on back-gated few-layer $\mathrm{MoS_2}$, below an onset temperature same as the critical temperature $T_{\rm C}\approx7$ K of bulk Pb. Below $T_{\rm C}$, the…
The observation of coherent quantum transport phenomena in metals and semiconductors is limited by the eventual loss of phase coherence of the conducting electrons. We use the weak localization effect to measure the low-temperature…
The in situ annealing conditions of pulsed laser deposited MgB2 films were studied. The precursor films were deposited at 250 C from a stoichiometric MgB2 target in a 120mTorr Ar atmosphere. The films were then in situ annealed at a…
A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique can be used to investigate charge trapping in ferroelectric…
Significative enhance in magnetocaloric effect due to finite size and surface effects is reported in Terbium(Tb) thin films in the helimagnetic phase (corresponding to a temperature range from $T_C$=219 K to $T_N$=231 K), for external…
Temperature dependent weak localization is measured in metallic nanowires in a previously unexplored size regime down to width $w=5$ nm. The dephasing time, $\tau_{\phi}$, shows a low temperature $T$ dependence close to quasi-1D theoretical…