Related papers: Electrical Spin Injection in a Ferromagnetic / Tun…
Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferromagnetic metals and semiconductors for obtaining an efficient…
In this paper one can find a detailed description of the research performed by author during his stay at IMEC (Belgium). It deals with the experimental verification of the highly coherent electron spin transport across ferromagnetic metal /…
We investigate effect of a step-doping profile on the spin injection from a ferromagnetic metal contact into a semiconductor quantum well (QW) in spin FETs using a Monte Carlo model. The considered scheme uses a heavily doped layer at the…
Electrical generation and transduction of polarized electron spins in semiconductors are of central interest in spintronics and quantum information science. While spin generation in semiconductors has been frequently realized via electrical…
Spin-dependent transport through an endohedral fullerene Co@C$_{60}$ dimer with gold electrodes is explored theoretically using density functional and extended H\"{u}ckel theory. Density of states spin polarizations up to 95%, due to…
We propose an experimentally-feasible system based on spin transitions in the fractional quantum Hall effect regime where parafermions, high-order non-abelian excitations, can be potentially realized. We provide a proof-of-concept…
Thin van der Waals (vdW) layered magnetic materials disclose the possibility to realize vdW heterostructures with new functionalities. Here we report on the realization and investigation of tunneling spin valves based on van der Waals…
We have investigated the variation of induced ferroelectric polarization under magnetic field with various directions and magnitudes in a staggered antiferromagnet Ba$_2$CoGe$_2$O$_7$. While the ferroelectric polarization cannot be…
The use of the spin Hall effect and its inverse to electrically detect and manipulate dynamic spin currents generated via ferromagnetic resonance (FMR) driven spin pumping has enabled the investigation of these dynamically injected currents…
Injection and detection of spin accumulation in a semiconductor having localized states at the interface is evaluated. Spin transport from a ferromagnetic contact by sequential, two-step tunneling via interface states is treated not in…
We calculate the current spin polarisation and the interface resistance of Fe/GaAs and Fe/ZnSe (001) spin injection junctions from first principles, including also the possibility of a Schottky barrier. From our results of interface…
We demonstrate that non-equilibrium electrons in thin nonmagnetic semiconductor layers or quantum dots can be fully spin polarized by means of simultaneous electrical spin injection and extraction. The complete spin polarization is achieved…
With nearly complete spin polarization, the ferromagnetic semiconductor europium monoxide could enable next-generation spintronic devices by providing efficient ohmic spin injection into silicon. Spin injection is greatly affected by the…
We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain a precise information on the spin…
First-principles calculations were carried out to investigate interfacial strain effects on spin injection and spin polarization of a magnetic tunnel junction consisting of half-metallic full-Heusler alloy Co2CrAl and ferroelectric…
Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of…
We present first-principles calculations of ballistic spin injection in Fe/GaAs and Fe/ZnSe junctions with orientation (001), (111), and (110). We find that the symmetry mismatch of the Fe minority-spin states with the semiconductor…
We present a theory of the imprinting of the electron spin coherence and population in an n-doped semiconductor which forms a junction with a ferromagnet. The reflection of non-equilibrium semiconductor electrons at the interface provides a…
The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to…
We report a systematic study of the structure, electric and magnetic properties of Ca$_3$Co$_{2-x}$Mn$_x$O$_6$ single crystals with $x =$ 0.72 and 0.26. The DC and AC magnetic susceptibilities display anomalies with characteristic of the…