Related papers: Gate-controlled spin polarized current in ferromag…
A scheme of spin diode is proposed that uses a step-like quantum wire with Rashba spin-orbit interaction, connected to two leads with different width. It is shown that a very large vertical spin-polarized current can be generated when…
All-electrical control of spin transport in nanostructures has been the central interest and chal- lenge of spin physics and spintronics. Here we demonstrate on-chip spin polarizing/filtering actions by driving the gate-defined one…
Spin dependent single electron tunneling in ferromagnetic double junctions is analysed theoretically in the limit of sequential tunneling. The influence of discrete energy spectrum of the central electrode (island)on the spin accumulation,…
Using the Keldysh formalism the tunneling current through a hybrid structure where a confined magnetic insulator (I) is sandwiched between two non-magnetic leads is calculated. The leads can be either normal metals (M) or superconductors…
We study transport in ferromagnetic single-electron transistors. The non- equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances…
In spite of the absence of a macroscopic magnetic moment, an anti-ferromagnet is spin-polarized on an atomic scale. The electric current passing through a conducting anti-ferromagnet is polarized as well, leading to spin-transfer torques…
The electron transport properties of hybrid ferromagnetic|normal metal structures such as multilayers and spin valves depend on the relative orientation of the magnetization direction of the ferromagnetic elements. Whereas the contrast in…
A one dimensional theory of lateral spin-polarized transport is derived from the two dimensional flow in the vertical cross section of a stack of ferromagnetic and paramagnetic layers. This takes into account the influence of the lead on…
Control over quantum systems is typically achieved by time-dependent electric or magnetic fields. Alternatively, electronic spins can be controlled by spin-polarized currents. Here we demonstrate coherent driving of a single spin by a…
The material dependence of hot electron magnetotransport in a spin-valve transistor has been theoretically explored. We calculate the parallel and anti-parallel collector current changing the types and relative spin orientation of the…
We study the switching-process of the magnetization in a ferromagnetic-normal-metal multilayer system by a spin polarized electrical current via the spin transfer torque. We use a spin drift-diffusion equation (SDDE) and the…
An unpolarized charge current passing through a chaotic quantum dot with spin-orbit coupling can produce a spin polarized exit current without magnetic fields or ferromagnets. We use random matrix theory to estimate the typical spin…
A theory of spin-polarized electron transport in ferromagnet/semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductor structures, is developed. The aim is to provide…
We theoretically predict spatial separation of spin-polarized ballistic currents in transition metal dichalcogenides (TMDs) due to trigonal warping. We quantify the effect in terms of spin polarization of charge carrier currents in a…
Spintronics, a technology harnessing electron spin for information transmission, offers a promising avenue to surpass the limitations of conventional electronic devices. While the spin directly interacts with the magnetic field, its control…
In single-molecule magnets, the exchange between a localized spin moment and the electronic background provides a suitable laboratory for studies of dynamical aspects of both local spin and transport properties. Here we address the time…
We demonstrate a tunable negative differential resistance controlled by spin blockade in single electron transistors. The single electron transistors containing a few electrons and spin polarized source and drain contacts were formed in…
Manipulation of the spin-states of a quantum dot by purely electrical means is a highly desirable property of fundamental importance for the development of spintronic devices such as spin-filters, spin-transistors and single-spin memory as…
We propose and numerically analyze novel reconfigurable logic gates using "single-electron spin transistors" (SESTs), which are single-electron transistors (SETs) with ferromagnetic electrodes and islands. The output characteristics of a…
The recently developed semiclassical theory for magnetoelectronic circuits is applied to a transistor-like device consisting of a normal metal island and three magnetic terminals. The electric current between source and drain can be…