Related papers: Bulk Band Gaps in Divalent Hexaborides
The superconducting gap of MgB2 has been studied by high-resolution angle-resolved photoemission spectroscopy (ARPES). The momentum(k)-resolving capability of ARPES enables us to identify the s- and p-orbital derived bands predicted from…
In$_2$Se$_3$ is a semiconductor material that can be stabilized in different crystal structures (at least one 3D and several 2D layered structures have been reported) with diverse electrical and optical properties. This feature has plagued…
Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room…
Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor, (Ga,Mn)As, offers a great opportunity to observe novel spin-related phenomena as well as to demonstrate new functionalities of spintronic devices. Here, we report on…
In the presence of multiple bands, well-known electronic instabilities may acquire new complexity. While multiband superconductivity is the subject of extensive studies, the possibility of multiband charge density waves (CDWs) has been…
Strong electron interactions in solids increase effective mass, and shrink the electronic bands [1]. One of the most unique and robust experimental facts about iron-based superconductors [2-4] is the renormalization of the conduction band…
In a previous paper [\prb {\bf 50}, 1980 (1994)] we gave account of the nondispersive band first found experimentally at --4.4 eV for CdTe(001) by Niles and H\"ochst. We have characterized this band as a surface--induced bulk state. In a…
Low band gap thermoelectric materials suffer from bipolar effects at high temperatures, with increased electronic thermal conductivity and reduced Seebeck coefficient, leading to reduced power factor and low ZT figure of merit. In this work…
Doped free carriers can substantially renormalize electronic self-energy and quasiparticle band gaps of two-dimensional (2D) materials. However, it is still challenging to quantitatively calculate this many-electron effect, particularly at…
We determine the fundamental electronic and optical properties of the high-thermal-conductivity III-V semiconductor boron arsenide (BAs) using density functional and many body perturbation theory including quasiparticle and spin-orbit…
We have performed angle-resolved photoemission spectroscopy (ARPES) on Cux(PbSe)5(Bi2Se3)6 (CPSBS; x = 1.47), a superconductor derived from a topological insulator heterostructure, to elucidate the electronic states relevant to the…
Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either $^{10}$B or $^{11}$B to…
Using a well-focused soft X-ray synchrotron radiation beam, angle-resolved photoelectron spectroscopy was applied to a full-Heusler-type Co$_2$MnGe alloy to elucidate its bulk band structure. A large parabolic band at the Brillouin zone…
A well-known feature in transport data of the topological Kondo insulator SmB$_6$ is the sign change in the Hall coefficient at 65 K. Carriers in SmB$_6$ are known to be negative, but above 65 K, the Hall sign suggests that the carriers are…
Defects in hexagonal boron nitride (hBN) exhibit single-photon emission (SPE) and are thus attracting broad interest as platforms for quantum information and spintronic applications. However, the atomic structure and the specific impact of…
Utilizing three-terminal tunnel emission of ballistic electrons and holes, we have developed a method to self-consistently measure the bandgap of semiconductors and band discontinuities at semiconductor heterojunctions without any…
We performed an extensive investigation on the correlations among superconductivity, structural instability and band filling in Nb1-xB2 materials. Structural measurements reveal that a notable phase transformation occurs at x=0.2,…
We present a theoretical study of electronic transport in a hybrid junction consisting of an excitonic insulator sandwiched between a normal and a superconducting electrode. The normal region is described as a two-band semimetal and the…
Near band-gap luminescence (hnu > 5 eV) of hexagonal boron nitride has been studied by means of the time- and energy-resolved photoluminescence spectroscopy method. Two emissions have been observed at 5.5 eV and 5.3 eV. The high-energy…
Integrating the carrier tunability of a functional two-dimensional material electronic device with a direct probe of energy- and momentum-resolved electronic excitations is essential to gain insights on how many-body interactions are…