Related papers: Field Effect Magnetization Reversal in Ferromagnet…
Guided by the internal-reference rule and the known band offsets in III-V and II-VI diluted magnetic semiconductors, we discuss the feasibility of obtaining p-type conductivity, required for the carrier-induced ferromagnetism, as well as…
A mean field model of ferromagnetism mediated by delocalized or weakly localized holes in zinc-blende and wurzite diluted magnetic semiconductors is presented. The model takes into account: (i) strong spin-orbit and kp couplings in the…
Photoluminescence spectra of a (001)-Cd0.99Mn0.01Te quantum well were taken with linear-polarization resolution and using an in-plane magnetic field. Because the quantum well contained a two-dimensional electron gas, the spectra consisted…
Semiconductor structures using ferromagnetic semiconductors as spin injectors are promising systems for future spintronic devices. Here, we present combined photoluminescence (PL) and time-resolved magneto-optical experiments of a nominally…
We develop a theory of non-linear growth direction transport in magnetically doped II-VI compound semiconductor multiple-quantum-well systems. We find that the formation of electric field domains can be controlled by manipulating the space…
A modified effective field model was developed to quantitatively interpret the angular dependent magnetization reversal processes in exchange biased Fe/IrMn bilayers. Several kinds of multi-step loops with distinct magnetization reversal…
The highly nonlinear coupling of transport and magnetic properties in a multiwell heterostructure, which comprises ferromagnetic quantum wells made of diluted magnetic semiconductors, is theoretically investigated. The interplay of resonant…
The magnetic order resulting from a confinement-adapted Ruderman-Kittel-Kasuya-Yosida indirect exchange between magnetic moments in the metallic phase of a AlAs/Ga(1-x)Mn(x)As quantum well is studied by Monte Carlo simulation. This coupling…
We examine theoretically the intersubband transitions induced by laser beams of light with orbital angular momentum (twisted light) in semiconductor quantum wells at normal incidence. These transitions become possible in the absence of…
A negative magnetoresistance under the in-plane magnetic field, reaching maximum 30-40% of its zero-field value in fields higher than ~12 T, has been found in wide Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum wells (QW) containing the…
Microphotoluminescence mapping experiments were performed on a modulation doped (Cd,Mn)Te quantum well exhibiting carrier induced ferromagnetism. The zero field splitting that reveals the presence of a spontaneous magnetization in the…
Electrical control of magnetism in a two-dimensional (2D) semiconductor is of great interest for emerging nanoscale low-dissipation spintronic devices. Here, we propose a general approach of tuning magnetic coupling and anisotropy of a van…
Using numerical simulation we have studied a magnetization distribution and a process of magnetization reversal in nanoscale magnets placed above a superconductor plane. In order to consider an influence of superconductor on magnetization…
Precession of magnetization induced by pulsed optical excitation is observed in a ferromagnetic semiconductor (Ga,Mn)As by time-resolved magneto-optical measurements. It appears as complicated oscillations of polarization plane of…
We report results of a Monte Carlo study of doped, diluted magnetic semiconductors in the low carrier density (insulating) regime. We find that the system undergoes a transition from a paramagnet at high temperatures to a ferromagnet at low…
We present a dynamical model that successfully explains the observed time evolution of the magnetization in diluted magnetic semiconductor quantum wells after weak laser excitation. Based on the pseudo-fermion formalism and a second order…
Stemming from antiferromagnetic coupling, exchange bias allows inverted hysteresis in a magnetic system. Such room temperature magnetic reversal has yet to be observed in an amorphous antiferromagnet. Furthermore, the impact of this…
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…
In a two-dimensional electron gas, the quantized Hall conductance can be induced by a strong magnetic field, known as the quantum Hall effect, and it can also result from the strong exchange coupling of magnetic ions, dubbed as the "quantum…
Carrier-induced ferromagnetic semiconductors (FMSs) have been intensively studied for decades as they have novel functionalities that cannot be achieved with conventional metallic materials. These include the ability to control magnetism by…