Related papers: Microscopic interface phonon modes in structures o…
The discovery of the fractional quantum Hall effect in GaAs-based semiconductor devices has lead to new advances in condensed matter physics, in particular the possibility for exotic, topological phases of matter that possess fractional,…
The GaAs/GaAsN interface band offset is calculated from first principles. The electrostatic potential at the core regions of the atoms is used to estimate the interface potential and align the band structures obtained from respective bulk…
Spin-phonon interactions are one of the mechanisms limiting the lifetime of spin qubits made in semiconductor quantum dots. At variance with other mechanisms such as charge noise, phonons are intrinsic to the device and can hardly be…
Topological interface states in periodic lattices have emerged as valuable assets in the fields of electronics, photonics, and phononics, owing to their inherent robustness against disorder. Unlike electronics and photonics, the linear…
We investigate the behavior of phonons at the epitaxial interface between YBa2Cu3O7-{\delta} thin film and (La,Sr)(Al,Ta)O3 substrate using vibrational electron energy loss spectroscopy. Interfacial phonon modes with different degrees of…
We describe an implementation of ab-initio methodology to compute inelastic shot noise signals due to electron-vibration scattering in nanoscale junctions. The method is based on the framework of non-equilibrium Keldysh Green's functions…
We investigate the influence of the electron-phonon interaction on the decay dynamics of a quantum dot coupled to an optical microcavity. We show that the electron-phonon interaction has important consequences on the dynamics, especially…
Over the past two decades, epitaxial semiconductor quantum dots (QDs) have demonstrated very promising properties as sources of single photons and entangled photons on-demand. Among different growth methods, droplet etching epitaxy has…
An experimental study of optical phonon modes, both normal and interface (IF) phonons, in bilayer strain-coupled InAs/GaAs_(1-x)Sb_x quantum dot heterostructures has been presented by means of low-temperature polarized Raman scattering. The…
In this study, we explore the heterointerface of MgB$_2$ film on SiC substrate at atomic scale using electron microscopy and spectroscopy. We detect ~1 nm MgO between MgB$_2$ and SiC. Atomic-level electron energy loss spectra (EELS) show…
We study the quasi-normal modes (QNM) of electromagnetic and gravitational perturbations of a Schwarzschild black hole in an asymptotically Anti-de Sitter (AdS) spacetime. Some of the electromagnetic modes do not oscillate, they only decay,…
Light-sound interactions have long been exploited in various acousto-optic devices based on bulk crystalline materials. Conventionally these devices operate in megahertz frequency range where the acoustic wavelength is much longer than the…
By applying an unrestriced Hartree-Fock approximation and a Random Phase approximation to multiband Peierls-Hubbard Hamiltonians, we determine the phonon mode structure in models of transition metal oxides in the presence of intrinsic…
Quantum dots in GaAs/InGaAs structures have been proposed as a candidate system for realizing quantum computing. The short coherence time of the electronic quantum state that arises from coupling to the nuclei of the substrate is…
Phonon modes at microwave frequencies can be cooled to their quantum ground state using conventional cryogenic refrigeration, providing a convenient way to study and manipulate quantum states at the single phonon level. Phonons are of…
Dissipation of micro- and nano-scale mechanical structures is dominated by quantum-mechanical tunneling of two-level defects intrinsically present in the system. We find that at high frequencies--usually, for smaller, micron-scale…
We consider pseudogap effects for electrons interacting with gapless modes. We study both generic 1D semiconductors with acoustic phonons and incommensurate charge density waves. We calculate the subgap absorption as it can be observed by…
The properties of the phonon-induced interaction between electrons are studied using the local density approximation (LDA). Restricting the electron momenta to the Fermi surface we find generally that this interaction has a pronounced peak…
Charge noise is critical in the performance of gate-controlled quantum dots (QDs). Here we show the 1/f noise for a microscopic graphene QD is substantially larger than that for a macroscopic graphene field-effect transistor (FET),…
Surface acoustic waves are commonly used in a variety of radio-frequency electrical devices as a result of their operation at high frequencies and robust nature. For devices based on Rayleigh-like plane waves, functionality is based on the…