Related papers: The oxidation state at tunnel junction interfaces
Oxide interfaces feature unique two-dimensional (2D) electronic systems with diverse electronic properties such as tunable spin-orbit interaction and superconductivity. Conductivity emerges in these interfaces when the thickness of an…
While catalytic mechanisms on electrode surfaces have been proposed for decades, the pathways by which the product's chemical bonds evolve from the initial charge-trapping intermediates have not been resolved in time. Here, we discover a…
Thin film metal-insulator-metal junctions are used in a novel approach to investigate the dissipation of potential energy of multiply charged ions impinging on a polycrystalline metal surface. The ion-metal interaction leads to excited…
We demonstrate that good superconductor/insulator/normal-metal tunnel junctions can be fabricated on as-grown superconducting MgB2 thin films. The as-grown films were prepared by coevaporation at low growth temperatures of around 280deg.…
This study presents a comprehensive investigation of chemical, structural, and magnetic properties of Ti/Ni multilayer systems with period thicknesses of 4 nm and 10 nm. Particular attention was paid to the characterization of the…
Several technical issues and challenges are identified and investigated for the planar tunneling spectroscopy of the topological Kondo insulator SmB$_6$. Contrasting behaviors of the tunnel junctions prepared in two different ways are…
AlN-GaN heterostructures are central to high-power and high-frequency electronics, including RF devices, power converters, and AI accelerators. An intermediate Al1-xGaxN (AlGaN) layer is often present, either unintentionally during growth…
In this paper we present the experimental realization of a Nb tunnel junction connected to a high-gap superconducting NbTiN embedding circuit. We investigate relaxation of nonequilibrium quasiparticles in a small volume Au layer between the…
The magnetic tunnel junction is a cornerstone of spintronic devices and circuits, providing the main way to convert between magnetic and electrical information. In state-of-the-art magnetic tunnel junctions, magnesium oxide is used as the…
In polar-oxide interfaces, a certain number of monolayers (ML) is needed for conductivity to appear. This threshold for conductivity is explained by accumulating sufficient electric potential to initiate charge transfer to the interface.…
We have measured the tunnelling current in Nb/Nb$_x$O$_y$/Ni planar tunnel junctions at different temperatures. The junctions are in the intermediate transparency regime. We have extracted the current polarization of the metal/ferromagnet…
The Ni-Au-Ga interdiffusion mechanisms taking place during rapid thermal annealing (RTA) under oxygen atmosphere of a Ni-Au/p-GaN contact are investigated by high-resolution transmission electron microscopy (HR-TEM) coupled to energy…
We present a theory for the pseudo-gap state recently observed at the LaAlO3/SrTiO3 interface, based on superconducting islands embedded in a metallic background. Superconductivity within each island is BCS-like, and the local critical…
Interfacial bond formation during sputter deposition of metal oxide thin films onto polycarbonate (PC) is investigated by ab initio molecular dynamics simulations and X-ray photoelectron spectroscopy (XPS) analysis of PC | X interfaces (X =…
Experimental studies of FeCoB/MgO/FeCoB tunnel junctions indicate that boron diffuses into MgO during rf-sputtering and forms polycrystalline Mg-B-O regions. These tunnel junctions provide high tunneling magnetoresistance values and low RA…
The Mn$_3$Ga Heusler compound and related alloys are the most promising materials for the realization of spin-transfer-torque switching in magneto tunneling junctions. Improved performance can be achieved by high quality interfaces in these…
Spinel MgAl2O4 and family oxides are emerging barrier materials useful for magnetic tunnel junctions (MTJs). We report large tunnel magnetoresistance (TMR) ratios up to 429% at room temperature (RT) and 1,034% at 10 K in a…
Tunneling defects in disordered materials form spurious two-level systems which are a major source of decoherence for micro-fabricated quantum devices. For superconducting qubits, defects in tunnel barriers of submicrometer-sized Josephson…
High quality epitaxial NbN/MgO/NbN Josephson junctions have been realized with MgO barriers up to a thickness of d=1 nm. The junction properties coherently scale with the size of barrier, and low critical current densities down to 3…
Deep submicron Al-AlOx-Nb tunnel junctions and single electron transistors with niobium islands were fabricated by electron beam gun shadow evaporation. Using stencil masks consisting of the thermostable polymer polyethersulfone (PES) and…