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Related papers: Non-linear excitations in 1D correlated insulators

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Shuttle-like mechanism of electron transport through a single level vibrating quantum dot is considered in the regime of strong electromechanical coupling. It is shown that the increment of shuttle instability is a nonmonotonic function of…

Mesoscale and Nanoscale Physics · Physics 2013-02-07 Gleb A. Skorobagatko , Ilya V. Krive , Robert I. Shekhter

By employing a newly developed dynamical simulation method, which is a combination of classical molecular dynamics (MD) and the adaptive time-dependent density matrix renormalization group (TDDMRG), we investigate the dynamics of charge…

Materials Science · Physics 2016-09-28 Haibo Ma , Ulrich Schollwoeck

We define, compute and analyze the nonequilibrium differential optical conductivity of the one-dimensional extended Hubbard model at half-filling after applying a pump pulse, using the time-dependent density matrix renormalization group…

Strongly Correlated Electrons · Physics 2021-08-19 Julian Rincon , Adrian E. Feiguin

To study digital Mott insulator LaTiO3 and band insulator SrTiO3 interfaces, we apply correlated band theory (LDA+U) to (n,m) multilayers, 1<n,m<9. If the on-site repulsion on Ti is large enough to model the magnetic insulating behavior of…

Materials Science · Physics 2007-05-23 Rossitza Pentcheva , Warren E. Pickett

We extend a perturbative, nonequilibrium renormalization group approach to multi-orbital systems and apply it for studying transport through two parallel quantum dots coupled electrostatically. In general, the conductance shows pronounced…

Strongly Correlated Electrons · Physics 2007-05-23 Y. -F. Yang , K. Held

A resolvent formalism is applied to the problem of inelastic scattering of an electron linearly coupled to a set of phonon modes. It is shown how the many phonon mode coupling and excitation can be reduced to a single phonon mode…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 M. A. Gata

Recent experiments have demonstrated that the performances of organic FETs strongly depend on the dielectric properties of the gate insulator. In particular, it has been shown that the temperature dependence of the mobility evolves from a…

Strongly Correlated Electrons · Physics 2009-11-13 S. Fratini , A. F. Morpurgo , S. Ciuchi

Topologically nontrivial states are common in symmetry broken phases at macroscopic scales. Low dimensional systems bring them to a microscopic level where solitons emerge as single particles. The earliest and latest applications are…

Strongly Correlated Electrons · Physics 2007-05-23 S. Brazovski

We present a class of holographic models that behave effectively as prototypes of Mott insulators, materials where electron-electron interactions dominate transport phenomena. The main ingredient in the gravity dual is that the gauge-field…

High Energy Physics - Theory · Physics 2017-02-01 Matteo Baggioli , Oriol Pujolas

We investigate a microscopic model for strongly correlated electrons with both on-site and nearest neighbor Coulomb repulsion on a 2D square lattice. This exhibits a state in which electrons undergo a ``somersault'' in their internal…

Superconductivity · Physics 2009-10-31 Mona Berciu , Sajeev John

The behavior of charge carriers in polar materials is governed by electron-phonon interactions, which affect their mobilities via phonon scattering and may localize carriers into self-induced deformation fields, forming self-trapped…

Materials Science · Physics 2025-07-08 Vasilii Vasilchenko , Matteo Giantomassi , Samuel Poncé , Xavier Gonze

We present a theory for the recombination of (charged) holons and doublons in one-dimensional organic Mott insulators, which is responsible for the decay of a photoexcited metallic state. Due to the charge-spin separation, the dominant…

Strongly Correlated Electrons · Physics 2015-11-18 Zala Lenarčič , Martin Eckstein , Peter Prelovšek

We investigate the dynamical spin and charge structure factors and the one-particle spectral function of the one-dimensional extended Hubbard model at half band-filling using the dynamical density-matrix renormalization group method. The…

Strongly Correlated Electrons · Physics 2009-11-11 H. Benthien , E. Jeckelmann

A heterostructure of a semi-infinite metal and a Mott insulator is considered. It is supposed that both materials have an identical lattice spacing and hopping integrals and differ in the Hubbard repulsion which is negligible in the metal…

Strongly Correlated Electrons · Physics 2015-05-13 A. Sherman , N. Voropajeva

Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and…

Mesoscale and Nanoscale Physics · Physics 2020-05-20 Olya A. Ilinskaya , Danko Radic , Hee Chul Park , Ilya V. Krive , Robert I. Shekhter , Mats Jonson

We examined the characteristics of a metal-insulator transition on a two-dimensional non-bipartite lattice when both disorders and electron interactions are present. Using a real-space renormalization group method and finite-size scaling…

Strongly Correlated Electrons · Physics 2007-05-23 Jiaxiang Wang , Sabre Kais

Metallic systems with delocalized valence electrons host collective charge density oscillations known as plasmons. On the other hand, conventional insulators do not have free electrons and the low energy charge degrees of freedom are pinned…

Electronic transport in a model molecular device coupled to local phonon modes is theoretically analyzed. The method allows for obtaining an accurate approximation of the system's quantum state irrespective of the electron and phonon energy…

Mesoscale and Nanoscale Physics · Physics 2007-10-10 Antonino La Magna , Ioannis Deretzis

Transport through a one--dimensional wire of interacting electrons connected to semi--infinite leads is investigated using a bosonization approach. An incident electron is transmitted as a sequence of partial charges. The dc conductance is…

Condensed Matter · Physics 2009-10-28 I. Safi , H. J. Schulz

It is known that when strong electric field is applied to a semiconductor sample, the current voltage characteristic deviates from the linear response. In this letter, we propose a new point of view of nonlinearity in semiconductors which…

Materials Science · Physics 2016-06-22 S. Molina-Valdovinos , Yu. G. Gurevich
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