Related papers: Spin Electronics and Spin Computation
Over the past decade a large family of spintronic devices have been proposed as candidates for replacing CMOS for future digital logic circuits. Using the recently developed Modular Approach framework, we investigate and identify the…
A theory of spin-polarized electron transport in ferromagnet/semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductor structures, is developed. The aim is to provide…
A spin transport model is employed to study the effects of spin dephasing induced by diffusion-driven transit-time uncertainty through semiconductor spintronic devices where drift is the dominant transport mechanism. It is found that in the…
Spintronic diodes are emerging as disruptive candidates for impacting several technological applications ranging from the Internet of Things to Artificial Intelligence. In this letter, an overview of the recent achievements on spintronic…
We present a theoretical and a numerical formalism for analysis and design of spintronic integrated circuits (SPINICs). The formalism encompasses a generalized circuit theory for spintronic integrated circuits based on nanomagnetic dynamics…
The silicon (Si) based spin-MOSFET (metal-oxide semiconductor field-effect transistor) is considered to be the building block of low-power-consumption electronics, utilizing spin-degrees of freedom in semiconductor devices. In this paper,…
Spin-based electronics or spintronics relies on the ability to store, transport and manipulate electron spin polarization with great precision. In its ultimate limit, information is stored in the spin state of a single electron, at which…
A theory of spin-transport in hybrid normal metal - ferromagnetic electronic circuits is developed, taking into account non-collinear spin-accumulation. Spin-transport through resistive elements is described by 4 conductance parameters.…
Spin-polarized antiferromagnets have recently gained significant interest because they combine the advantages of both ferromagnets (spin polarization) and antiferromagnets (absence of net magnetization) for spintronics applications. In…
We discuss spin physics, Guido Altarelli's contribution to it, and what we still have to learn. We set out in particular a programme for incorporating constraints from semi-inclusive data into global fits of polarized PDFs, and discuss the…
Achieving control over the electron spin in quantum dots (artificial atoms) or real atoms promises access to new technologies in conventional and in quantum information processing. Here we review our proposal for quantum computing with…
Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here, we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single…
We propose and investigate a spin-cell device which provides the necessary spin-motive force to drive a spin current for future spintronic circuits. Our spin-cell have four basic characteristics: (i) it has two poles so that a spin current…
A proposal of electrically controlled spin transistor in helical magnetic field is presented. In the proposed device, the transistor action is driven by the Landau-Zener transitions that lead to a backscattering of spin polarized electrons…
Recent experimental breakthroughs have demonstrated that the electron spin in silicon can be reliably injected and detected as well as transferred over distances exceeding 1 mm. We propose an on-chip communication paradigm which is based on…
The field of magnetic skyrmions has been actively investigated across a wide range of topics during the last decades. In this topical review, we mainly review and discuss key results and findings in skyrmion research since the first…
All-electrical control of spin transport in nanostructures has been the central interest and chal- lenge of spin physics and spintronics. Here we demonstrate on-chip spin polarizing/filtering actions by driving the gate-defined one…
We propose and investigate a spin transistor device consisting of two ferromagnetic leads connected by a two-dimensional topological insulator as the channel material. It exploits the unique features of the topological spin-helical edge…
A number of spintronic junction transistors, that exploit the spin degree of freedom of an electron in addition to the charge degree of freedom, have been proposed to provide simultaneous non-volatile storage and signal processing…
Traditional studies that combine spintronics and superconductivity have mainly focused on the injection of spin-polarized quasiparticles into superconducting materials. However, a complete synergy between superconducting and magnetic orders…