Related papers: Valley Splitting in Si-Inversion Layers at Low Mag…
Recently, altermagnets demonstrate numerous newfangle physical phenomena due to their inherent antiferromagnetic coupling and spontaneous spin splitting, that are anticipated to enable innovative spintronic devices. However, the rare…
The coupling between $z$ valleys in the conduction band of a Si quantum well arises from phenomena occurring within several atoms from the interface, thus ruling out a theoretical description based on pure effective mass theory. However,…
We describe an angularly asymmetric interface-scattering mechanism which allows to spatially separate the electrons in the two low-energy valleys of bilayer graphene. The effect occurs at electrostatically defined interfaces separating…
The influence of microwave radiation on the DC-magnetoresistance of 2D-electrons is studied in the regime beyond the recently discovered zero resistance states when the cyclotron frequency exceeds the radiation frequency. Radiation below 30…
We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities $n\simeq (1-50) \times 10^{11}$cm$^{-2}$, which includes the vicinity of the apparent metal-insulator transition in…
A Weyl semimetal (WSM)\ is a three-dimensional topological phase of matter where pairs of nondegenerate bands cross at isolated points in the Brillouin zone called Weyl nodes. Near these points, the electronic dispersion is gapless and…
We report on beating appearance in Shubnikov-de Haas oscillations in conduction band of 18-22nm HgTe quantum wells under applied top-gate voltage. Analysis of the beatings reveals two electron concentrations at the Fermi level arising due…
Atomically thin crystals of transition metal dichalcogenides are ideally suited to study the interplay of light-matter coupling, polarization and magnetic field effects. In this work, we investiagte the formation of exciton-polaritons in a…
We investigate magnetotransport on Bernal-stacked tetralayer graphene whose band structure consists of two massive subbands with different effective masses. Under a finite displacement field, we observe valley splitting of Landau levels…
Transition metal dichalcogenides provide a platform for exploring spin-valley physics, offering a promising approach to electric-field-driven spin control for low-power spintronic and quantum devices. Here, we demonstrate…
The fundamental properties of valleys are recently attracting growing attention due to electrons in new and topical materials possessing this degree-of-freedom and recent proposals for val-leytronics devices. In silicon MOSFETs, the…
The valley splitting (VS) of a silicon quantum dot plays an important role for the performance and scalability of silicon spin qubits. In this work we investigate the VS of a SiGe/Si/SiGe heterostructure as a function of the size and…
Interface disorder and its effect on the valley degeneracy of the conduction band edge remains among the greatest theoretical challenges for understanding the operation of spin qubits in silicon. Here, we investigate a counterintuitive…
We report the low-temperature magneto-transport in the bulk-insulating single crystal of topological insulator Sn doped Bi1.1Sb0.9Te2S. The Shubnikov-de Haas oscillations appear with their reciprocal frequency proportional to cos/theta ,…
We developed a comprehensive theoretical framework focusing on many-body effects of exciton species in monolayer WS$_2$, including bright and dark excitons, and intra- and inter-valley biexcitons, to investigate valley dynamics in monolayer…
We develop the theory of the spin and valley Hall effects in two-dimensional systems caused by asymmetric -- skew -- scattering of the quasiparticles. The collision integral is derived in the third order in the particle-particle interaction…
The amplitude and phase of Shubnikov-de Haas oscillations have been analyzed in detail for two-dimensional electron gases subjected to a weak unidirectional periodic potential modulation. The amplitude is suppressed, accompanied by…
The resistivities of the dilute, strongly-interacting 2D electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by…
Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent…
The altermagnetism caused by alternating crystal environment provides a unique opportunity for designing new type of valley polarization. Here, we propose a way to realize valley polarization in two-dimensional (2D) tetragonal…