Related papers: Valley Splitting in Si-Inversion Layers at Low Mag…
Degenerate extrema in the energy dispersion of charge carriers in solids, also referred to as valleys, can be regarded as a binary quantum degree of freedom, which can potentially be used to implement valleytronic concepts in van der Waals…
We report measurements consistent with the valley Kondo effect in Si/SiGe quantum dots, evidenced by peaks in the conductance versus source-drain voltage that show strong temperature dependence. The Kondo peaks show unusual behavior in a…
We present a theory of an optically induced valley polarization in an interacting, time-reversal symmetric Weyl semimetal placed under strong magnetic fields. Because the application of a magnetic field reduces the symmetry of the crystal,…
Valley, as a new degree of freedom for electrons, has drawn considerable attention due to its significant potential for encoding and storing information. Lifting the energy degeneracy to achieve valley polarization is necessary for…
We provide the first observation of weak localization in high carrier density two-dimensional electron gas in AlInN/GaN heterostructures; at low temperatures and low fields the conductivity increases with increasing magnetic field. Weak…
Since the last century, considerable efforts have been devoted to the study of valley-degenerate narrow gap semiconductors, such as the Pb$_{1-x}$Sn$_x$Se alloy. This material possesses band edges at the $L$-points of their Brillouin zone,…
Recent experiments in the two dimensional electron systems in silicon MOSFETs have shown that the in-plane magnetic field $H_{sat}$ required to saturate the conductivity to its high-field value and the magnetic field $H_s$ needed to…
Valley splitting in strained Si/SiGe quantum wells is a central parameter for silicon spin qubits and is commonly described with envelope-function and effective-mass theories. These models provide a computationally efficient continuum…
We have observed that the tunneling magnetoconductance between two-dimensional (2D) electron gases formed at nominally identical InAs-AlSb interfaces most often exhibits two sets of Shubnikov-de Haas oscillations with almost the same…
In a multi-valley electronic band structure, lifting of the valley degeneracy is associated with rotational symmetry breaking in the electronic fluid, and may emerge through spontaneous symmetry breaking order, or through a large response…
Understanding strongly interacting electrons enables the design of materials, nanostructures and devices. Developing this understanding relies on the ability to tune and control electron-electron interactions by, e.g., confining electrons…
We find that the motion of the valley electrons -- electronic states close to the ${\rm K}$ and ${\rm K'}$ points of the Brillouin zone -- is confined into two dimension when the layers of MoS$_{2}$ follow the 3R stacking, while in the 2H…
We have measured the Shubnikov-de Haas oscillations in high-mobility Si MOS structures over a wide range of the carrier densities n > 0.77x10^{11}/cm^2. This range includes the critical density n_c of the metal-insulator transition (2D MIT)…
The 2-D electron system (2DES) in Si metal-oxide field-effect transistors (MOSFETS) consists of two distinct electron fluids interacting with each other. We calculate the total energy as a function of the density $n$, and the spin…
We have realized encapsulated trilayer MoS$_2$ devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000~cm$^{2}$/(V s) at a density of 3 $\times$ 10$^{12}$~cm$^{-2}$ at a temperature of 1.9~K.…
We have measured the weak localization magnetoresistance in (001)-oriented Si MOS structures with a wide range of mobilities. For the quantitative analysis of the data, we have extended the theory of weak-localization corrections in the…
The spin susceptibility of a two-dimensional electron system is calculated by determining the spin-polarization dependence of the ground-state energy within the self-consistent mean-field theory of Singwi et al. (STLS). Results are…
We report the detailed study of the influence of the spin and valley splittings on such physical observables of the two-dimensional disordered electron liquid as resistivity, spin and valley susceptibilities. We explain qualitatively the…
We study theoretically nonlinear valley polarization dynamics of excitons in atom-thin semiconductors. The presence of significant polarization slows down valley relaxation due to an effective magnetic field resulting from exciton-exciton…
We use an empirical tight-binding approach to calculate electron and hole states in [111]-grown PbSe nanowires. We show that the valley-orbit and spin-orbit splittings are very sensitive to the atomic arrangement within the nanowire…