Related papers: Reflectionless tunneling in ballistic normal-metal…
We develop a theory for the proximity effect in superconductor-semiconductor-normal metal tunneling structures, which have recently been extensively studied experimentally, leading to the observation of transport signatures consistent with…
We investigate a normal metal -- superconductor (point) contact in the limit where the number of conducting channels in the metallic wire is reduced to few channels. As the effective Fermi energy drops below the gap energy, a conducting…
The ab-plane NIS-tunnelling conductance in d-wave superconductors shows a zero-bias conductance peak which is predicted to split in a magnetic field. In a pure d-wave superconductor the splitting is linear for fields small on the scale of…
We have measured the conductance and shot-noise of superconductor-normal metal (S-N) junctions between a Niobium (Nb) film and a 2-dimensional electron gas (2DEG), formed in an InAs-based semiconductor heterostructure. Adjacent to the…
Helical edge states exist in the mixed spin-singlet and spin-triplet phase of a noncentrosymmetric (NCS) superconductor. In this article we have considered a planar ferromagnetic metal/NCS superconductor tunnel junction and have studied the…
In tunneling spectroscopy studies of ferromagnet/superconductor (F/S) junctions, the effects of spin polarization, Fermi wavevector mismatch (FWM) between the F and S regions, and interfacial resistance play a crucial role. We study the low…
We predict theoretically and observe in experiment that the differential conductance of a superconducting SET transistor exhibits a peak which is a complete analogue in a macroscopic system of a standard resonant tunneling peak associated…
In a mesoscopic conductor electric resistance is detected even if the device is defect-free. We engineer and study a cold-atom analog of a mesoscopic conductor. It consists of a narrow channel connecting two macroscopic reservoirs of…
Coherent transport in Nb/GaAs superconductor-semiconductor microstructures is presented. The structures fabrication procedure is based on delta-doped layers grown by molecular-beam-epitaxy near the GaAs surface, followed by an As cap layer…
For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin) semiconductors have now the potential to push further the…
We investigate the tunneling conductance of superconductor-insulator-normal metal (SIN) and superconductor-insulator-superconductor (SIS) heterostructures with one superconducting side of the junction that is electrically driven and can…
We investigate the tunneling conductance of Weyl semimetal with tilted energy dispersion by considering electron transmission through a p-n-p junction with one-dimensional electric and magnetic barrier. In the presence of both electric and…
We present theoretical model for the proximity effect in F-SFF-F structures (F is ferromagnet, S is superconductor) with non-collinear magnetizations vectors in the F-layers and with arbitrary magnitudes of exchange fields. Electrical…
The influence of a rectangular potential barrier on the quantum transport of fermions in silicene is explored. Specifically, analytical solutions are presented to derive transmission and reflection probabilities together with conductance.…
Interlayer tunneling measurements in the strongly correlated bilayer quantized Hall phase at $\nu_T=1$ are reported. The maximum, or critical current for tunneling at $\nu_T=1$, is shown to be a well-defined global property of the coherent…
Tunneling of microwaves through a smooth barrier in a transmission line is considered. In contrast to standard wave barriers, we study the case where the dielectric permittivity is positive, and the barrier is caused by the inhomogeneous…
A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical…
In this paper, we attempt the theoretical modeling of the magnetic tunnel junctions with embedded magnetic and nonmagnetic nanoparticles (NPs). A few abnormal tunnel magnetoresistance (TMR) effects, observed in related experiments, can be…
Electronic processes in a semiconductor system consisting of some Resonant Tunnelling Structures, built in the depletion region of a Schottky barrier, are investigated. It is shown that the Schottky barrier can block or unblock the resonant…
We consider the conductance of a one-dimensional wire interrupted by a double-barrier structure allowing for a resonant level. Using the electron-electron interaction strength as a small parameter, we are able to build a non-perturbative…