Related papers: Self-Assembled InAs Quantum Dots on Patterned InP …
Non-classical photon sources made of semiconductor quantum dots (QDs) emitting in the telecommunication C-band are crucial components for low-loss, long-distance photonic quantum communication networks. Here we designed and fabricated…
We report on the monolithic, two-step epitaxial growth of site-controlled InGaAs quantum dots via the buried stressor method with local quantum dot density variation. As a result of high fabrication accuracy, we achieve low lateral…
The development of deterministic single photon sources emitting in the telecommunication bands is a key challenge for quantum communication and photonic quantum computing. Here, we investigate the optical properties and single-photon…
Dense arrays of semiconductor quantum dots are currently employed in highly efficient quantum dot lasers for data communications and other applications. Traditionally, the electronic properties of such quantum nanostructures have been…
A full three-dimensional model for the calculation of the electronic structure of semiconductor quantum dots (QD) and molecules (QDM) grown on high index surfaces and/or in the presence of an external magnetic field is presented. The strain…
Quantum networking technologies use spin qubits and their interface to single photons as core components of a network node. This necessitates the ability to co-design the magnetic- and optical-dipole response of a quantum system. These…
This work presents a foundational approach for fabricating arrays of self-aligned micro- and nanopillar structures incorporating individual site-controlled quantum dots (QDs) for enhanced light extraction. This method leverages the…
We explore the dynamics and directionality of spontaneous emission from self-assembled In(Ga)As quantum dots into TE-polarised guided modes in GaAs two-dimensional photonic crystal waveguides. The local group velocity of the guided…
A semiconductor quantum dot (QD) can generate highly indistinguishable single-photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD optical properties is essential.…
The transformation of monolayer islands into bilayer islands as a first step of the overall two-dimensional to three-dimensional (2D-3D) transformation in the coherent Stranski-Krastanov mode of growth is studied for the cases of expanded…
Quantum dot superparticles are a specific class of metamaterials created through the self-assembly of nanometer semiconductor quantum dots into organized micro-scale structures, such as microspheres. Superparticles exhibit unique optical,…
Sequential single-electron charging is observed in InAs Self-Assembled Quantum Dots using capacitance spectroscopy. In this system, the Coulomb energy is smaller than the inter-level energy spacings due to the quantum confinement and both…
MnAs has been grown by means of MBE on the GaN(0001)-(1x1) surface. Two options of initiating the crystal growth were applied: (a) a regular MBE procedure (manganese and arsenic were delivered simultaneously) and (b) subsequent deposition…
We show that with a new family of pyramidal site-controlled InGaAsN quantum dots it is possible to obtain areas containing as much as 15% of polarization-entangled photon emitters - a major improvement if compared to the small fraction…
We find the single exciton's fine structure splitting (FSS), which splits its degenerate ground state manifold into singlets, nearly vanishes in highly asymmetric quantum dots due to the cancellation of splitting effects with markedly…
Ultra-precise lattice parameter measurements in single crystals are achievable, in principle, by X-ray multiple diffraction (XMD) experiments. Tiny sample misalignments have hindered the systematic usage of XMD in studies where accuracy is…
The scalable integration of solid-state quantum emitters into photonic nanostructures remains a central challenge for quantum photonic technologies. Here, we demonstrate a robust and streamlined integration strategy that tackles the…
We investigate the photoluminescence temperature dependence of individual InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The high-density dots are grown on InP substrates and the selection of a smaller dot…
Purcell-enhanced quantum dot single-photon emission in the telecom C-band from InAs quantum dots inside circular Bragg grating cavities is shown. The InAs quantum dots are grown by means of molecular beam epitaxy on an InP substrate and are…
Epitaxial self-assembled quantum dots (SAQDs) represent an important step in the advancement of semiconductor fabrication at the nanoscale that will allow breakthroughs in electronics and optoelectronics. In these applications, order is a…