Related papers: Dephasing and Metal-Insulator Transition
According to the scaling theory of localization, all quantum electronic states are localized in two-dimensional (2D) systems. One consequence of the theory is that there is no quantum percolation transition in 2D. However, in a real system…
We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…
The interplay between strong Coulomb interactions and randomness has been a long-standing problem in condensed matter physics. According to the scaling theory of localization, in two-dimensional systems of noninteracting or weakly…
The recent experimental observation of a metal-insulator transition in two dimensions prompts a re-examination of the theory of disordered interacting systems. We argue that the existing theory permits the existence of a metallic phase and…
We present a theory of the metal-insulator transition in a disordered two-dimensional electron gas. A quantum critical point, separating the metallic phase which is stabilized by electronic interactions, from the insulating phase where…
The discovery of a metallic state and a metal-insulator transition (MIT) in two-dimensional (2D) electron systems challenges one of the most influential paradigms of modern mesoscopic physics, namely, that "there is no true metallic…
Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all…
Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of…
Experimental evidence for the possible universality classes of the metal-insulator transition (MIT) in two dimensions (2D) is discussed. Sufficiently strong disorder, in particular, changes the nature of the transition. Comprehensive…
The discovery of the metal-insulator transition (MIT) in two-dimensional (2D) electron systems challenged the veracity of one of the most influential conjectures in the physics of disordered electrons, which states that `in two dimensions,…
In a recent Letter, Kravchenko et al. [cond-mat/9608101] have provided evidence for a metal-insulator transition (MIT) in a two-dimensional electron system (2DES) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs). The…
We reexamine the problem of delocalization of two-dimensional electrons in the presence of random magnetic field. By introducing spatial correlations among random fluxes, a well-defined metal-insulator transition characterized by a…
In the absence of magnetic field or spin-orbit coupling the one-parameter scaling theory predicts localization of all states in two-dimensional (2D) disordered systems, for any amount of disorder. However, a 2D metallic phase has been…
To explain the main features of the metal-insulator transition (MIT) in 2D we suggest a simple model taking into account strongly localized states in the band tail of 2D conductivity band with a specific emphasize of a role of…
It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the…
The possibility of the strong electron-electron interaction driven insulating phase from the metallic phase in two-dimensions has been suggested for clean systems without intentional disorder, but its rigorous demonstration is still…
We study the metal-insulator transition (MIT) in weakly coupled disordered planes on the basis of a Non-Linear Sigma Model (NL$\sigma $M). Using two different methods, a renormalization group (RG) approach and an auxiliary field method, we…
We investigated the interdependence of the effects of disorder and carrier correlations on the metal-insulator transition in two-dimensional electronic systems. We present a quantitative metal-insulator phase diagram. Depending on the…
The conductance of a disordered finite-size electron system is calculated by reducing the initial dynamic problem of arbitrary dimensionality to strictly one-dimensional problems for one-particle mode propagators. The metallic ground state…
We review our recent results on Anderson localization in systems of two interacting particles coupled by contact interactions. Based on an exact mapping to an effective single-particle problem, we numerically investigate the occurrence of…