Related papers: Quantum Size Effect transition in percolating nano…
With a reduction in the average grain size in nanostructured films of elemental Nb, we observe a systematic crossover from metallic to weakly-insulating behavior. An analysis of the temperature dependence of the resistivity in the…
The quantum size effect on the in-plane paramagnetic critical field in Pb nanofilms is investigated with the use of the spin-generalized Bogolubov-de Gennes equations. It is shown that the critical field oscillates as a function of the…
An ultra-small Coulomb blockade device can be regarded as a mesoscopic artificial atom system and provides a rich experimental environment for studying quantum transport phenomena[1]. Previously, these quantum effects have been investigated…
In transition metal oxides, quantum confinement arising from a large surface to volume ratio often gives rise to novel physico-chemical properties at nanoscale. Their size dependent properties have potential applications in diverse areas,…
Heat transport in nanoscale systems is both hard to measure microscopically, and hard to interpret. Ballistic and diffusive heat flow coexist, adding confusion. This paper looks at a very simple case: a nanoscale crystal repeated…
We report high-resolution scanning tunneling microscopy (STM) study of nano-sized Pb islands grown on SrTiO3, where three distinct types of gaps with different energy scales are revealed. At low temperature, an enlarged superconducting gap…
Current-voltage measurements have been made at room temperature on a Si-rich silicon oxide film deposited via Electron-Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) and annealed at 750 - 1000$ ^\circ$C. The…
Disorder in any form is considered to be highly detrimental to the experimental exploration of novel phenomena in quantum materials with non-trivial band topology. Contrary to established belief, clear topological features are reliably…
Silicon-On-Insulator nanowire transistors of very small dimensions exhibit quantum effects like Coulomb blockade or single-dopant transport at low temperature. The same process also yields excellent field-effect transistors (FETs) for…
An unresolved challenge facing electronics at a few-nm scale is that resistive channels start leaking due to quantum tunneling. This affects the performance of nanoscale transistors, with single-molecule devices displaying particularly low…
At sufficiently low temperatures, many quantum effects, such as weak localization, electron-electron interaction (EEI), and Kondo screening, can lead to pronounced corrections to the semiclassical electron transport. Although low…
Suppression of the critical temperature in homogeneously disordered superconducting films is a consequence of the disorder-induced enhancement of Coulomb repulsion. We demonstrate that for the majority of thin films studied now this effect…
The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron…
Tailoring thermal properties with nanostructured materials can be of vital importance for many applications. Generally classical phonon size effects are employed to reduce the thermal conductivity, where strong phonon scattering by…
Magnetotransport of superconducting Nd_{2-x}Ce_xCuO_{4+y} (NdCeCuO) films is studied in the temperature interval 0.3-30 K. The microscopic theory of the quantum corrections to conductivity, both in the Cooper and in the diffusion channels,…
The superconducting transition temperature (TC) in nanostructured Pb remains nearly constant as the particle size is reduced from 65 to 7nm, below which size the superconductivity is lost rather abruptly. In contrast, there is a large…
Since the concepts for the implementation of data storage and logic gates used in conventional electronics cannot be simply downscaled to the level of single molecule devices, new architectural paradigms are needed, where quantum…
Quantum size effect-induced heat capacity of metal nanoparticles at low temperatures was predicted 79 years ago to be exponential. This, however, has not been reported until date. In defiance, we demonstrate here observation of…
Quantized conductance is reported in high-crystalline tin oxide (SnO2) nanobelt back-gate field-effect transistors, at low temperatures. The quantized conductance was observed as current oscillations in the drain current vs. gate voltage…
Measurements of conductance $G$ on short, wide, high-mobility Si-MOSFETs reveal both a two-dimensional metal-insulator transition (MIT) at moderate temperatures (1 $<~ T <$ 4~K) and mesoscopic fluctuations of the conductance at low…