Related papers: A central role for the exchange-correlation hole i…
We show that the metal to insulator transition, whether generated by decreasing the electron density or by increasing the spin alignment, is determined by a universal functional form of the two-electron correlation function g(r). This…
We investigated the interdependence of the effects of disorder and carrier correlations on the metal-insulator transition in two-dimensional electronic systems. We present a quantitative metal-insulator phase diagram. Depending on the…
We reexamine the problem of delocalization of two-dimensional electrons in the presence of random magnetic field. By introducing spatial correlations among random fluxes, a well-defined metal-insulator transition characterized by a…
The critical electron density for the metal-insulator transition in a two-dimensional electron gas can be determined by two distinct methods: (i) a sign change of the temperature derivative of the resistance, and (ii) vanishing activation…
The low-temperature resistivity of a SiGe 2-dimensional hole gas has been studied using the gate controlled carrier density as a parameter. A metal-insulator transition is seen both in the temperature and in the electric field behaviour.…
Metal-insulator transitions involve a mix of charge, spin, and structural degrees of freedom, and when strongly-correlated, can underlay the emergence of exotic quantum states. Mott insulators induced by the opening of a Coulomb gap are an…
The conductance of an open quench-disordered two-dimensional (2D) electron system subject to an in-plane magnetic field is calculated within the framework of conventional Fermi liquid theory applied to actually a three-dimensional system of…
We show that, in a magnetic field parallel to the 2D electron layer, strong electron correlations change the rate of tunneling from the layer exponentially. It results in a specific density dependence of the escape rate. The mechanism is a…
We investigate metal-insulator transitions on an interacting two-dimensional Dirac fermion system using the determinant quantum Monte Carlo method. The interplay between Coulomb repulsion, disorder and magnetic fields, drives the otherwise…
We present a model for the metal-insulator transition in 2D, observed in the recent years. Our starting point consists of two ingredients only, which are ubiquitous in the experiments: Coulomb interactions and weak disorder spin-orbit…
We study localization phenomena in two dimensional systems of charged particles in the presence of a metallic ground plane with a particular focus on the superconductor-insulator transition. The ground plane introduces a screening of the…
We show that the parallel magnetic field-induced increase in the critical electron density for the Anderson transition in a strongly interacting two-dimensional electron system is caused by the effects of exchange and correlations. If the…
We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune…
Strong correlation effects, such as a dramatic increase in the effective mass of the carriers of electricity, recently observed in the low density electron gas have provided spectacular support for the existence of a sharp metal-insulator…
We provide a critical perspective on the collection of low-temperature transport phenomena in low-density two-dimensional semiconductor systems often referred to as the 2D metal-insulator transition. We discuss the physical mechanisms…
In this overview we provide a general introduction to metal-insulator transitions, with focus on specific mechanisms that can localize the electrons in absence of magnetic or charge ordering, and produce well defined quantum critical…
We report a simulation of the metal-insulator transition in a model of a doped semiconductor that treats disorder and interactions on an equal footing. The model is analyzed using density functional theory. From a multi-fractal analysis of…
For more than a decade it was widely accepted that two-dimensional electrons are insulating at zero temperature and at zero magnetic-field. Experimentally it was demonstrated that, when placed in a strong perpendicular magnetic field, the…
We consider a model for a metal-insulator transition of correlated electrons in an external magnetic field. We find a broad region in interaction and magnetic field where metallic and insulating (fully magnetized) solutions coexist and the…
The problem of screening the Coulomb interaction between charge carriers in type II heterostructures based on transition metal dichalcogenides is Analytically solved. At a sufficiently high density of charge carriers, the density dependence…