Related papers: Metal-insulator transition in anisotropic systems
The Anderson metal-insulator transition is a fundamental phenomenon in condensed matter physics, describing the transition from a conducting (metallic) to a non-conducting (insulating) state driven by disorder in a material. At the critical…
It is shown that a family of models associated with the kicked Harper model is relevant for cyclotron resonance experiments in an antidot array. For this purpose a simplified model for electronic motion in a related model system in presence…
We investigated the interdependence of the effects of disorder and carrier correlations on the metal-insulator transition in two-dimensional electronic systems. We present a quantitative metal-insulator phase diagram. Depending on the…
We discuss a metal-insulator transition caused by random couplings of magnetic moments in itinerant systems. An analytic solution for the single particle Green function is derived from dynamical self consistency equations, the corresponding…
A simple non-interacting-electron model, combining local quantum tunneling and global classical percolation (due to a finite dephasing time at low temperatures), is introduced to describe a metal-insulator transition in two dimensions. It…
We present the exact ground-state wave function and energy of the generalized Hubbard model, subjected to the condition that the number of double occupied sites is conserved, for a wide, physically relevant range of parameters. For one hole…
Static disorder in a noninteracting gas of electrons confined to two dimensions can drive a continuous quantum (Anderson) transition between a metallic and an insulating state when time-reversal symmetry is preserved but spin-rotation…
Experimental results on the metal-insulator transitions and the anomalous properties of strongly interacting two-dimensional electron systems are reviewed and critically analyzed. Special attention is given to recent results for the…
We study the metal-insulator transition accompanied with a charge ordering in the one-dimensional (1D) t-J' model at quarter filling by the density matrix renormalization group method. In this model the nearest-neighbor hopping energy t…
We report on a metal-insulator transition (MIT) that is observed in an electron system at the SmTiO3/SrTiO3 interface. This MIT is characterized by an abrupt transition at a critical temperature, below which the resistance changes by more…
The mechanism that drives a metal-insulator transition in an undoped quasi-one-dimensional Mott insulator is examined in the framework of the Hubbard model with two different hoppings t_{perp 1} and t_{perp 2} between nearest-neighbor…
We present a theory of the metal-insulator transition in a disordered two-dimensional electron gas. A quantum critical point, separating the metallic phase which is stabilized by electronic interactions, from the insulating phase where…
We numerically show that very small magnetic flux can significantly shift the metal-insulator transition point in a disordered electronic system. The shift we observe for the 3d Anderson model obeys a power law as predicted by Larkin and…
The magnetic transport properties have been measured for La0.67-xYxCa0.33MnO3 (0 <= x <= 0.14) system. It was found that the transition temperature Tp almost linearly moves to higher temperature as H increases. Electron spin resonance…
We theoretically consider the problem of doping induced insulator to metal transition in bulk semiconductors by obtaining the transition density as a function of compensation, assuming that the transition is an Anderson localization…
We investigate the zero-temperature metal-insulator transition in a one-dimensional two-component Fermi gas in the presence of a quasi-periodic potential resulting from the superposition of two optical lattices of equal intensity but…
In this paper, we applied a deep neural network to study the issue of knowledge transferability between statistical mechanics models. The following computer experiment was conducted. A convolutional neural network was trained to solve the…
Anderson localization transitions are a universal quantum phenomenon sensitive to the disorder and dimensionality of electronic systems. Over the past decades, this intriguing topic has inspired overwhelmingly more theoretical studies than…
The low-temperature resistivity of a SiGe 2-dimensional hole gas has been studied using the gate controlled carrier density as a parameter. A metal-insulator transition is seen both in the temperature and in the electric field behaviour.…
By using a combination of detailed experimental studies and simple theoretical arguments, we identify a novel mechanism characterizing the hopping transport in the Mott insulating phase of Ca$_{2-x}$Sr$_x$RuO$_4$ near the metal-insulator…