Related papers: Metal-insulator transition in anisotropic systems
We investigate the metal-insulator transition of the one-dimensional SU(N) Hubbard model for repulsive interaction. Using the bosonization approach a Mott transition in the charge sector at half-filling (k_F=\pi/Na_0) is conjectured for N >…
We study the Anderson metal-insulator transition for non ergodic random Schr\"odinger operators in both annealed and quenched regimes, based on a dynamical approach of localization, improving known results for ergodic operators into this…
We present a scaling description of a metal-insulator transition in two-dimensional electron systems that is driven by a vanishing compressibility rather than a vanishing diffusion coefficient. A small set of basic assumptions leads to a…
We study temperature induced metal-insulator transition in doped ferromagnetic semiconductors, described by s-d exchange model. The transition is a result of the mobility edge movement, the disorder being due to magnetic ions spin density…
We investigate the proposal that for weakly coupled two-dimensional magnets the transition temperature scales with a critical exponent which is equivalent to that of the susceptibility in the underlying two-dimensional model, $ \gamma $.…
Disorder or sufficiently strong interactions can render a metallic state unstable causing it to turn into an insulating one. Despite the fact that the interplay of these two routes to a vanishing conductivity has been a central research…
Random flux is commonly believed to be incapable of driving full metal-insulator transitions in non-interacting systems. Here we show that random flux can after all induce a full metal-band insulator transition in the two-dimensional…
The Anderson metal-insulator transition is a continuous phase transition driven by disorder. It remains a challenging problem to theoretically determine universal critical properties at the transition. The Anderson transition in a model…
We suggest that highly conducting oriented polymers with a fibril structure can be modeled by a regular lattice of disordered metallic wires with a random first-neighbor interwire coupling which mimics the cross-links between fibrils. We…
We study the metal-to-insulator transition of the Hubbard model at zero temperatures in infinite dimensions. The coexistence of metallic and insulating solutions for a finite range of the interaction is established. It is shown that the…
To understand how charge transport is affected by a background medium and vice versa we study a two-channel transport model which captures this interplay via a novel, effective fermion-boson coupling. By means of (dynamical) DMRG we prove…
In the previous papers (Journ. of Phys. Stud. 2, 362 (1998); cond-mat/9811213) we have studied metal-insulator transition in a generalized Hubbard model with correlated hopping at half-filling and zero temperature. The present paper is…
To investigate the influence of electronic interaction on the metal-insulator transition (MIT), we consider the Aubry-Andr\'{e} (or Harper) model which describes a quasiperiodic one-dimensional quantum system of non-interacting electrons…
We study the effect of disorder and doping on the metal-insulator transition in a repulsive Hubbard model on a square lattice using the determinant quantum Monte Carlo method. First, with the aim of making our results reliable, we compute…
We have studied the critical properties of the three-dimensional random anisotropy Heisenberg model by means of numerical simulations using the Parallel Tempering method. We have simulated the model with two different disorder…
We derive the disorder vs. doping phase diagram of the doped Hubbard model via Dynamical Mean Field Theory combined with Typical Medium Theory, which allows the description of both Mott (correlation driven) and Anderson (disorder driven)…
Anderson localization, the absence of diffusive transport in disordered systems, has been manifested as hopping transport in numerous electronic systems, whereas in recently discovered topological insulators it has not been directly…
We investigate the physical properties of two coupled chains of electrons, with a nearly half-filled band, as a function of the interchain hopping t_\perp and the doping. We show that upon doping, the system undergoes a metal-insulator…
By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this system is a density inhomogeneity driven…
We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical…