Related papers: Metal-Insulator Transitions in Interacting Disorde…
The universality of the metal-insulator transition in three-dimensional disordered system is confirmed by numerical analysis of the scaling properties of the electronic wave functions. We prove that the critical exponent $\nu$ and the…
By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this system is a density inhomogeneity driven…
The discovery of a metallic state and a metal-insulator transition (MIT) in two-dimensional (2D) electron systems challenges one of the most influential paradigms of modern mesoscopic physics, namely, that "there is no true metallic…
It is inferred from bulk-sensitive muon Knight shift measurement for a Bi$_{1.76}$Pb$_{0.35}$Sr$_{1.89}$CuO$_{6+\delta}$ single-layer cuprate that metal-insulator (MI) transition (in the low temperature limit, $T\rightarrow0$) occurs at the…
We investigated the interdependence of the effects of disorder and carrier correlations on the metal-insulator transition in two-dimensional electronic systems. We present a quantitative metal-insulator phase diagram. Depending on the…
In a recent Letter, Kravchenko et al. [cond-mat/9608101] have provided evidence for a metal-insulator transition (MIT) in a two-dimensional electron system (2DES) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs). The…
We have investigated the interplay between the metal-insulator transition and ferromagnetism in $({\rm III}_{1-x},{\rm Mn}_x){\rm V}$ ferromagnetic semiconductors. Our study is based on a model in which $S=5/2$ Mn local moments are…
We observe an insulator-to-metal (I-M) transition in crystalline silicon doped with sulfur to non- equilibrium concentrations using ion implantation followed by pulsed laser melting and rapid resolidification. This I-M transition is due to…
It is well established that for non-interacting electrons, increasing disorder drives a metal into a gapless localized Anderson insulator. While in three dimensions a threshold in disorder must be crossed for the transition, in two…
The in-plane magnetoconductance of the strongly interacting two-dimensional electron system in a silicon MOSFET (metal-oxide-semiconductor-field-effect transistor) exhibits an unmistakeable kink at a well-defined electron density, $n_k$.…
The interplay between strong Coulomb interactions and randomness has been a long-standing problem in condensed matter physics. According to the scaling theory of localization, in two-dimensional systems of noninteracting or weakly…
The low-temperature resistivity of a SiGe 2-dimensional hole gas has been studied using the gate controlled carrier density as a parameter. A metal-insulator transition is seen both in the temperature and in the electric field behaviour.…
The conductance of a disordered finite-size electron system is calculated by reducing the initial dynamic problem of arbitrary dimensionality to strictly one-dimensional problems for one-particle mode propagators. The metallic ground state…
Strongly correlated materials often undergo a Mott metal-insulator transition, which is tipically first-order, as a function of control parameters like pressure. Upon doping, rich phase diagrams with competing instabilities are found. Yet,…
Quantum transport in disordered ferromagnetic (III,Mn)V semiconductors is studied theoretically. Mesoscopic wires exhibit an Anderson disorder-induced metal-insulator transition that can be controlled by a weak external magnetic field. This…
Transition metal phosphorous trichalcogenides, $M{\rm P}X_3$ ($M$ and $X$ being transition metal and chalcogen elements respectively), have been the focus of substantial interest recently because of their possible magnetism in the…
We report the observation of a metal insulator transition at B=0 in a high mobility two dimensional hole gas in a GaAs-AlGaAs heterostructure. A clear critical point separates the insulating phase from the metallic phase, demonstrating the…
Superconductor-Metal-Insulator crossover in disordered thin films is discussed on the basis of a random junction-network model.
A possibility of a metal-insulator transition in molecular conductors has been studied for systems composed of donor molecules and fully ionized anions with an incommensurate ratio close to 2:1 based on a one-dimensional extended Hubbard…
Studies of low-frequency resistance noise demonstrate that glassy freezing occurs in a two-dimensional electron system in silicon in the vicinity of the metal-insulator transition (MIT). The width of the metallic glass phase, which…