Related papers: Carrier-induced ferromagnetism in p-Zn1-xMnxTe
p-type doping of molecular-beam-epitaxy grown layers of the diluted magnetic semiconductor Zn(1-x)MnxTe is achieved by using an active nitrogen cell. The strong interaction between the localized Mn spins and the holes deeply modifies the…
The mechanism behind ferromagnetic exchange interaction in GdN is not well understood. It has been argued that it can be due to fourth order cross process of \textit{d-f} mixing and \textit{d-f} exchange. An alternative explanation suggests…
Carrier induced ferromagnetism in diluted III-V semi-conductor is analyzed within a two step approach. First, within a single site CPA formalism, we calculate the element resolved averaged Green's function of the itinerant carrier. Then…
Taking into account both random impurity distribution and thermal fluctuations of localized spins, we have performed a model calculation for the carrier (hole) state in Ga$_{1-x}$Mn$_x$As by using the coherent potential approximation (CPA).…
Carrier-induced ferromagnetism is investigated in a diluted Hubbard model for ordered impurity arrangements. The delicate competition between particle-hole processes contributing to the spin couplings results in a rich variety of behaviour.…
We calculate Curie temperatures and study the stability of ferromagnetism in diluted magnetic materials, taking as a model for the exchange between magnetic impurities a damped Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction and a shor t…
A mean field model of ferromagnetism mediated by delocalized or weakly localized holes in zinc-blende and wurzite diluted magnetic semiconductors is presented. The model takes into account: (i) strong spin-orbit and kp couplings in the…
Carrier-mediated ferromagnetism in a dilute magnetic semiconductor has been studied using i) a single-impurity based generalized RKKY approach which goes beyond linear response theory, and ii) a mean-field-plus-spin-fluctuation (MF+SF)…
Carrier-induced ferromagnetism has been observed in several (III,Mn)V semiconductors. We review the theoretical picture of these ferromagnetic semiconductors that emerges from a model with kinetic-exchange coupling between localized Mn…
We present all-electrical operation of a Fe$_x$Cr$_{1-x}$-based Curie switch at room temperature. More specifically, we study the current-induced thermally-driven transition from ferromagnetic to antiferromagnetic…
We show theoretically that the magnetic ions, randomly distributed in a two-dimensional (2D) semiconductor system, can generate a ferromagnetic long-range order via the RKKY interaction. The main physical reason is the discrete (rather than…
We demonstrate sharp thermally-induced switching between ferromagnetic and antiferromagnetic RKKY exchange in a spin-valve with the spacer incorporating a thin diluted ferromagnetic layer as the core. We illustrate the mechanism behind the…
After more than a decade of intensive research in the field of diluted magnetic semiconductors (DMS), the nature and origin of ferromagnetism, especially in III-V compounds is still controversial. Many questions and open issues are under…
The realization of semiconductors that are ferromagnetic above room temperature will potentially lead to a new generation of spintronic devices with revolutionary electrical and optical properties. Transition temperatures in doped ZnO are…
EuZn$_2$P$_2$ was reported to be an insulating antiferromagnet with $T_\mathrm{N}$ of 23.5 K. In this study, single crystals of EuZn$_2$P$_2$ exhibiting metallic behavior and a ferromagnetic order of 72 K ($T_\mathrm{C}$) are successfully…
Carrier-independent ferromagnetism of chromium doped topological insulator $Bi_xSb_{2-x}Te_3$ thin films,which cannot be explained by current theory of dilute magnetic semiconductor, has been reported recently. To study if it is related to…
Magnetization switching in ferromagnets has so far been limited to the current-induced spin-orbit-torque effects. Recent observation of helicity-independent all-optical magnetization switching in exchange-coupled ferromagnet ferrimagnet…
The electronic and magnetic properties of concentrated and diluted ferromagnetic semiconductors are investigated by using the Kondo lattice model, which describes an interband exchange coupling between itinerant conduction electrons and…
Carrier-induced ferromagnetism is investigated in a diluted ferromagnetic Kondo lattice model for several ordered impurity arrangements on square and cubic lattices, allowing for quantitative comparison with different theoretical pictures.…
Ion implantation of Mn ions into hole-doped GaP has been used to induce ferromagnetic behavior above room temperature for optimized Mn concentrations near 3 at.%. The magnetism is suppressed when the Mn dose is increased or decreased away…