Related papers: Electrical spin injection and detection in a semic…
We exploit the geometry of magnetic nanowires, which define 1D contacts to an encapsulated graphene channel, to introduce an out-of-plane component in the polarisation of spin carriers. By design, the magnetic nanowires traverse the angled…
A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of…
A method for measuring the degree of spin polarization of magnetic materials based on spin-dependent resonant tunneling is proposed. The device we consider is a ballistic double-barrier resonant structure consisting of a ferromagnetic layer…
Due to the spin-orbital coupling in a semiconductor quantum dot, a freely precessing electron spin produces a time-dependent charge density. This creates a sizeable electric field outside the dot, leading to promising applications in…
Long carrier spin lifetimes are a double-edged sword for the prospect of constructing "spintronic" logic devices: Preservation of the logic variable within the transport channel or interconnect is essential to successful completion of the…
A systematic investigation of spin injection behavior in Au/FM (FM = Fe and Ni) multilayers is performed using the superdiffusive spin transport theory. By exciting the nonmagnetic layer, the laser-induced hot electrons may transfer spin…
An impressive success of spintronic applications has been typically realized in metal-based structures which utilize magnetoresistive effects for substantial improvements in the performance of computer hard drives and magnetic random access…
In a thin strip of a two-dimensional semiconductor electronic system, spin-orbit coupling may be induced near both edges of the strip due to the substantial spatial variation of the confining potential in the boundary regions. In this paper…
We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the…
We propose the idea of a "spinguide", i.e. the semiconductor channel which is surrounded with walls from the diluted magnetic semiconductor (DMS) with the giant Zeeman splitting which are transparent for electrons with the one spin…
The injection, propagation and detection of spin currents are essential physical processes in spintronics. So far, the separation of charge and spin currents was facilitated by the electrical spin injection from a ferromagnet (FM) or the…
We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free…
The narrow gap semiconductor FeSi owes its strong paramagnetism to electron-correlation effects. Partial Co substitution for Fe produces a spin-polarized doped semiconductor. The spin-polarization causes suppression of the metallic…
We study spin polarization in a split-gate quantum wire focussing on the effect of a realistic smooth potential due to remote donors. Electron interaction and spin effects are included within the density functional theory in the local spin…
Within the scheme of quantum rate equations, we investigate the spin-resolved transport through a double quantum dot system with four ferromagnetic terminals. It is found that the injection efficiency of spin-polarized electrons can be…
We study ballistic transport through semiconductor quantum point contact systems under different confinement geometries and applied fields. In particular, we investigate how the {\em lateral} spin-orbit coupling, introduced by asymmetric…
The conversion of spin information into electrical signals is indispensable for spintronic technologies. Spin-to-charge conversion in ferromagnetic tunnel contacts is well-described using linear (spin-)transport equations, provided that…
We demonstrate methods to locally control the spin rotation of moving electrons in a GaAs channel. The Larmor frequency of optically-injected spins is modulated when the spins are dragged through a region of spin-polarized nuclei created at…
This article reviews spin-dependent transport of carriers in homogenous three-dimensional and two-dimensional semiconductors. We begin with a discussion of optical orientation of electron spins, which allows both the creation and detection…
We formulate a theory of current-induced spin torques in inhomogeneous III-V ferromagnetic semiconductors. The carrier spin-3/2 and large spin-orbit interaction, leading to spin non-conservation, introduce significant conceptual differences…