Related papers: Mesoscopic Tunneling Magnetoresistance
Peculiarities of transport properties of three- and two-dimensional half-metallic ferromagnets are investigated, which are connected with the absence of spin-flip scattering processes. The temperature and magnetic field dependences of…
Processes which flip the spin of an electron tunneling in a junction made up of magnetic electrodes are studied. It is found that: i) Magnetic impurities give a contribution which increases the resistance and lowers the magnetoresistance,…
The Tunneling Anisotropic Magneto-Thermopower (TAMT) and the Tunneling Anisotropic Spin-Seebeck (TASS) effects are studied for a magnetic tunnel junction (MTJ) composed of a ferromagnetic electrode, a zinc-blende semiconductor and a normal…
The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling…
We introduce a distinctive feature of spin-polarized transport, the Spin Coulomb Drag: there is an intrinsic source of friction for spin currents due to the Coulomb interaction between spin ``up'' and spin ``down'' electrons. We calculate…
We study the transport through gated GaAS:Si wires of 0.5 micrometer length in the insulating regime and observe transport via elastic tunneling at very low temperature. We describe the mean positive magnetoconductance and the mesoscopic…
We predict that a single-level quantum dot without discernible splitting of its spin states develops a spin-precession resonance in charge transport when embedded into a spin valve. The resonance occurs in the generic situation of Coulomb…
Current fluctuations can provide additional insight into quantum transport in mesoscopic systems. The present work is carried out for the fluctuation properties of transport through a pair of coupled quantum dots which are connected with…
Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic…
The fluctuations and the distribution of the conductance peak spacings of a quantum dot in the Coulomb-blockade regime are studied and compared with the predictions of random matrix theory (RMT). The experimental data were obtained in…
GaMnAs-based magnetic tunnel junction (MTJ) devices are characterized by in-plane and perpendicular-toplane magnetotransport at low temperatures. Perpendicular-to-plane transport reveals the typical tunneling magnetotransport (TMR) signal.…
Spin-dependent transport through an interacting single-level quantum dot coupled to ferromagnetic leads with non-collinear magnetizations is analyzed theoretically. The transport properties and average spin of the dot are investigated…
Spin-dependent transport phenomena due to relativistic spin-orbit coupling and broken space-inversion symmetry are often difficult to interpret microscopically, in particular when occurring at surfaces or interfaces. Here we present a…
We determine the zero-bias anomaly of the conductance of tunnel junctions by an approach unifying the conventional Coulomb blockade theory for ultrasmall junctions with the diffusive anomalies in disordered conductors. Both,…
Experiments have shown that the tunneling current in a Co/Al$_2$O$_3$ magnetic tunneling junction (MTJ) is positively spin polarized, opposite to what is intuitively expected from standard tunneling theory which gives the spin polarization…
We have studied tunnel magnetoresistance (TMR) in junctions with 3d ferromagnetic electrodes. Previously we predicted that defects in the barrier would result in reduced effective polarization P of the impurity assisted current. This is…
We study spin and charge diffusion in metallic-ferromagnet/topological-insulator junctions. The coupled diffusion equations are derived perturbatively with respect to the strength of the interlayer tunneling. We calculate spin accumulation…
The paper addresses inelastic spin-flip tunneling accompanied by surface spin excitations (magnons) in ferromagnetic junctions. The inelastic tunneling current is proportional to the magnon density of states which is energy-independent for…
Two-dimensional van der Waals (vdW) ferromagnetic/semiconductor heterojunctions represent an ideal platform for studying and exploiting tunneling magnetoresistance (TMR) effects due to the versatile band structure of semiconductors and…
Using a simple quantum-mechanical model, we explore a tunneling anisotropic magnetoresistance (TAMR) effect in ferroelectric tunnel junctions (FTJs) with a ferromagnetic electrode and a ferroelectric barrier layer, which spontaneous…