Related papers: Magnetoresistance From Quantum Interference Effect…
Materials with strong magnetoresistive responses are the backbone of spintronic technology, magnetic sensors, and hard drives. Among them, manganese oxides with a mixed valence and a cubic perovskite structure stand out due to their…
We report the observation of an unusual $B$ dependence of transverse magnetoresistance (MR) in the PrFeAsO, one of the parent compound of pnictide superconductors. Below the spin density wave transition, MR is large, positive and increases…
We study theoretically magnetoresistance (MR) of graphene with different types of disorder. For short-range disorder, the key parameter determining magnetotransport properties---a product of the cyclotron frequency and scattering…
We use both classical magnetotransport and quantum oscillation measurements to study the thickness evolution of the extremely large magnetoresistance (XMR) material and type-II Weyl semimetal candidate, $\gamma$-MoTe$_2$, protected from…
Anisotropic magnetoresistance (AMR) arises from symmetry lowering of the conductivity tensor induced by magnetic order. In simple ferromagnets, AMR is a relativistic effect, relying on spin-orbit interaction (SOC). Here, we demonstrate that…
The perovskite manganites of general formula RE_1-xAe_xMnO_3 (RE= rare earth,AE=Ca, Sr, Ba and Pb)have drawn considerable attention, especially following the discovery of colossal magnetoresistance (CMR). They exhibit extraordinary large…
The doping of the manganese site by iridium (up to 15%) in the small A cation manganites Pr_{1-x}Ca_xMnO_3 (0.4 < x < 0.8), has been investigated as a new method to suppress charge-ordering and induce CMR effects. Ir doping leads to…
Spin Hall magnetoresistance (SMR), the variation in resistance in a heavy metal (HM) with the magnetization orientation of an adjacent ferromagnet (FM), has been extensively studied as a powerful tool for probing surface magnetic moments in…
A (II,Mn)VI diluted magnetic semiconductor quantum dot with an integer number of electrons controlled with a gate voltage is considered. We show that a single conduction band electron is able to induce a spontaneous collective magnetization…
Magnetoresistance in many samples of Dirac semimetal and topological insulator displays non-monotonic behaviors over a wide range of magnetic field. Here a formula of magnetoconductivity is presented for massless and massive Dirac fermions…
We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from $T$ = 1.7 K up to room temperature.…
We present a theory for resonance-tunneling magnetoresistance (MR) in Ferromagnetic-Insulator-Nonmagnetic junctions. The theory sheds light on many of the recent electrical spin injection experiments, suggesting that this MR effect rather…
Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in thin film structures composed of alternating ferromagnetic and nonmagnetic layers. The effect manifests itself as a significant decrease (typically…
We have observed a superparamagnetic to ferromagnetic transition in films of isolated Ni grains covered by non-magnetic overlayers. The magnetoresistance (MR) of the films was measured as a function of the overlayer thickness. Initially,…
Colossal magnetoresistance (MR) is a well-known phenomenon, notably observed in hole-doped ferromagnetic manganites. It remains a major research topic due to its potential in technological applications. Though topological semimetals also…
Atomic-scale computational modeling of technologically relevant permanent magnetic materials faces two key challenges. First, a material's magnetic properties depend sensitively on temperature, so the calculations must account for thermally…
Ferromagnetic resonance (FMR) serves as a powerful probe of magnetization dynamics and anisotropy in percolating ferromagnets, where short-range interactions govern long-range magnetic order. We apply this approach to Ga$_{1-x}$Mn$_x$N ($x…
A negative-positive-negative switching behavior of magnetoresistance (MR) with temperature is observed in a ferromagnetic shape memory alloy Ni_1.75Mn_1.25Ga. In the austenitic phase between 300 and 120 K, MR is negative due to s-d…
Colossal magnetoresistance (CMR) is a rare phenomenon in which the electronic resistivity of a material can be decreased by orders of magnitude upon application of a magnetic field. Such an effect could be the basis of the next generation…
The transport and magnetic properties in ferromagnetic manganese-oxide thin films are studied based on the model of the coupling between the mobile d-electrons and the core spins in Mn ions. The spontaneous magnetization and the resistivity…