Related papers: Interface resistance of disordered magnetic multil…
Thin films of Topological insulators (TIs) coupled with ferromagnets (FMs) are excellent candidates for energy-efficient spintronics devices. Here, the effect of crystalline structural disorder of TI on interfacial and magnetic properties…
We study the combined effect of temperature and disorder in the spacer on the interlayer exchange coupling. The temperature dependence is treated on ab initio level. We employ the spin-polarized surface Green function technique within the…
The disorder and layer transitions in the interface between an Ising spin-1/2 film denoted $(n)$, and an Ising spin-1 film denoted $(m)$, are studied using Monte Carlo simulations. The effects of both an external magnetic field, acting only…
A general model for treating the effects of three dimensional interface roughness (IFR) in layered semiconductor structures has been derived and experimentally verified. Configurational averaging of the IFR potential produces an effective…
We present a detailed study of the ground-state magnetic structure of ultrathin Fe films on the surface of fcc Ir(001). We use the spin-cluster expansion technique in combination with the relativistic disordered local moment scheme to…
The effect of disorder on the perpendicular magnetoresistance of magnetic multilayers is investigated theoretically. Various kinds of disorder are considered: (i) interface substitutional disorder and (ii) bulk disorder in the various…
Boundary conditions for order parameters at an interface between ferromagnetic (FM) and two-sublattice antiferromagnetic (AFM) materials were obtained in the continuous medium approximation similarly to the approach which allows one to take…
We present results of electronic structure and transport calculations for metallic interfaces, based on density functional theory and the non-equilibrium Green's functions method. Starting from the electronic structure of smooth Al, Cu, Ag,…
There has been recent controversy about the magnitude of spin-flipping in the heavy metal Pt, characterized by the spin-diffusion length, lsf(Pt) We propose a resolution of this controversy, and also present evidence for the importance of a…
From measurements of the current-perpendicular-to-plane (CPP) total specific resistance (AR = area times resistance) of sputtered Pd/Ir multilayers, we derive the interface specific resistance, 2AR(Pd/Ir) = 1.02 +/- 0.06 fOhmm^2, for this…
The disorder effects on higher-order topological phases in periodic systems have attracted much attention. However, in aperiodic systems, such as quasicrystalline systems, the interplay between disorder and higher-order topology is still…
Heterostructures from complex oxides allow one to combine various electronic and magnetic orders as to induce new quantum states. A prominent example is the coupling between superconducting and magnetic orders in multilayers from high-Tc…
Mixed-dimensional magnetic heterostructures are intriguing, newly available platforms to explore quantum physics and its applications. Using state-of-the-art many-body perturbation theory, we predict the energy level alignment for a…
Interfacial spin-flip scattering plays an important role in magnetoelectronic devices. Spin loss at metallic interfaces is usually quantified by matching the magnetoresistance data for multilayers to the Valet-Fert model, while treating…
Understanding the interaction between dopants and semiconductor-oxide interfaces is an increasingly important concern in the drive to further miniaturize modern transistors. To this end, using a combination of first-principles…
A change in a materials electrical resistance with magnetic field (magnetoresistance) results from quantum interference effects and, or spin-dependent transport, depending on materials properties and dimensionality. In disordered…
Metal/semiconductor interfaces govern the operation of semiconductor devices through the formation of charge injection barriers that can be controlled by tuning the metal work function. However, the controlling ability is typically limited…
We calculate the spin-polarized electronic transport through a molecular bilayer spin valve from first principles, and establish the link between the magnetoresistance and the spin-dependent inter- actions at the metal-molecule interfaces.…
We report an investigation of the structural and electronic properties of hybrid superconductor/ferromagnet (S/F) bilayers of composition Nb/Cu$_{60}$Ni$_{40}$ prepared by magnetron sputtering. X-ray and neutron reflectometry show that both…
Resistivity augmentation in nanoscale metal interconnects is a performance limiting factor in integrated circuits. Here we present calculations of electron scattering and transmission at the interface between Cu interconnects and their…