Related papers: Spin transitions in a small Si quantum dot
We investigated electron transport through ultra small Si quantum dots. We found that the $B$-dependence of energy levels is dominated by the Zeeman shift, allowing us to measure the spin difference between two successive ground states…
We study a thermally induced spin flip of an electron spin located in a semiconductor quantum dot. This interesting effect arises from an intriguing interplay between the Zeeman coupling to an external magnetic field and the hyperfine…
Single electron tunneling is studied in a many electron quantum dot in high magnetic fields. For such a system multiple transitions of the spin configuration are theoretically predicted. With a combination of spin blockade and Kondo effect…
We have studied spin-flip transitions between Zeeman sublevels in GaAs electron quantum dots. Several different mechanisms which originate from spin-orbit coupling are shown to be responsible for such processes. It is shown that…
We study the spin filling of a semiconductor quantum dot using excited-state spectroscopy in a strong magnetic field. The field is oriented in the plane of the two-dimensional electron gas in which the dot is electrostatically defined. By…
Crossings between spin-singlet and spin-triplet lowest states are analyzed within the model of a two-electron quantum dot in a perpendicular magnetic field. The explicit expressions in terms of the magnetic field, the magnetic quantum…
Kondo conduction has been observed in a quantum dot with an even number of electrons at the Triplet-Singlet degeneracy point produced by applying a small magnetic field $B$ orthogonal to the dot plane. At a much larger field $ B \sim B_*$,…
Circulating orbital currents produced by the spin-orbit interaction for a single electron spin in a quantum dot are explicitly evaluated at zero magnetic field, along with their effect on the total magnetic moment (spin and orbital) of the…
Recent experiments are reviewed that explore the spin states of a ring-shaped many-electron quantum dot. Coulomb-blockade spectroscopy is used to access the spin degree of freedom. The Zeeman effect observed for states with successive…
We have measured the relaxation time, T1, of the spin of a single electron confined in a semiconductor quantum dot (a proposed quantum bit). In a magnetic field, applied parallel to the two-dimensional electron gas in which the quantum dot…
We present a theoretical study of magnetic field driven spin transitions of electrons in coupled lateral quantum dot molecules. A detailed numerical study of spin phases of artificial molecules composed of two laterally coupled quantum dots…
The spin-orbit coupling influences the total spin of semiconductor quantum dots. We analyze the theoretical prediction for the combined effects of spin-orbit coupling, weak vertical magnetic fields and deformation of the dot. Our results…
We review the peculiarities of transport through a quantum dot caused by the spin transition in its ground state. Such transitions can be induced by a magnetic field. Tunneling of electrons between the dot and leads mixes the states…
We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quantum dot is defined electrostatically in a point contact…
We study peculiarities of transport through a Coulomb blockade system tuned to the vicinity of the spin transition in its ground state. Such transitions can be induced in practice by application of a magnetic field. Tunneling of electrons…
We study the spin states of a few-electron quantum dot defined in a two-dimensional electron gas, by applying a large in-plane magnetic field. We observe the Zeeman splitting of the two-electron spin triplet states. Also, the one-electron…
We report measurements on a silicon nanowire quantum dot with a clarity that allows for a complete understanding of the spin states of the first four holes. First, we show control of the hole number down to one. Detailed measurements at…
We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field…
We discuss the rate of relaxation of the total spin in the two-electron droplet in the vicinity of the magnetic field driven singlet-triplet transition. The total spin relaxation is attributed to spin-orbit and electron-phonon interactions.…
We calculate that the electron states of strained self-assembled Ge/Si quantum dots provide a convenient two-state system for electrical control. An electronic state localized at the apex of the quantum dot is nearly degenerate with a state…