Related papers: Proximity effect in planar TiN-Silicon junctions
We have studied the superconducting behavior of 100 nm Titanium Nitride (TiN) thin film in a perpendicular magnetic field. We found a zero field transition temperature of 4.6 K and a slope in the H-T plane of -0.745 T/K. At 4.2 K, we have…
We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs…
We have found that the current- voltage characteristics of La0.7Sr0.3MnO3(-delta)/Nb:SrTiO3 rectifying junctions are quantitatively well-described by (thermally-assisted) tunneling with an effectively temperature-independent Schottky…
We investigate low-temperature transport properties of thin TiN superconducting films in the vicinity of the disorder-driven superconductor-insulator transition. In a zero magnetic field, we find an extremely sharp separation between…
We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode…
We observe a maximum in the conductance of Aluminum / n-GaAs junctions at temperatures 20 mK lower than the superconducting transition temperature. This is the first observation of a non- monotonic behavior of the conductance near the…
A superconducting state is characterized by the gap in the electronic density of states which vanishes at the superconducting transition temperature Tc. It was discovered that in high temperature superconductors a noticeable depression in…
Tungsten carbide (WC) contacts have been investigated as a novel gold-free Schottky metallization for AlGaN/GaN heterostructures. The evolution of the electrical and structural/compositional properties of the WC/AlGaN contact has been…
We investigate transition to the superconducting state in the ultrathin titanium nitride films on approach to superconductor-insulator transition. Building on the complete account of quantum contributions to conductivity, we demonstrate…
Understanding of the electrical contact properties of semiconductor nanowire (NW) field effect transistors (FETs) plays a crucial role in employing semiconducting NWs as building blocks for future nanoelectronic devices and in the study of…
The Schottky barrier of a metal-semiconductor junction is one of the key quantities affecting the charge transport in a transistor. The Schottky barrier height depends on several factors, such as work function difference, local atomic…
Superconducting-proximity topological insulators (STIs) have garnered significant research attention over the past two decades. In this Letter, we demonstrate that a low-dimensional STI in the topological-nontrivial phase (TP) exhibits an…
We report enhanced two-component superconductivity in (CoSi2/Si)/TiSi2 superconductor/normal-metal (S/N) heterojunctions. An enhanced superconducting transition temperature about twice that of CoSi2 and an upper critical field about 20…
A fundamental question of high-temperature superconductors is the nature of the pseudogap phase which lies between the Mott insulator at zero doping and the Fermi liquid at high doping p. Here we report on the behaviour of charge carriers…
Recent experimental investigations have demonstrated that doping a semiconductor is a route to increase the thermal boundary conductance at metal/semiconductor interfaces. In this work, the influence of the electrical properties on heat…
Recent experiments have demonstrated that the superconducting critical temperature may be improved in various metamaterial superconductor geometries. Here, we present the results of a study of tin-based metamaterial superconductors in the…
The tunability of topological surface states and controllable opening of the Dirac gap are of great importance to the application of topological materials. In topological crystalline insulators (TCIs), crystal symmetry and topology of…
We report on the charge carrier dynamics of superconducting titanium nitride (TiN) in the frequency range 90 - 510 GHz (3 - 17 cm-1). The experiments were perfomed on a 18 nm thick TiN film with a critical temperature of 3.4 K. Measurements…
Non-reciprocity in the critical current has been observed in a variety of superconducting systems and has been called the superconducting diode effect. The origin underlying the effect depends on the symmetry breaking mechanisms at play. We…
The dynamical properties of hybrid normal metal/superconductor structures have recently come into research focus both experimentally and theoretically. Recent experimental studies of the coherent admittance $% Y(\omega )$ of SNS rings as…