Related papers: Submonolayer epitaxy with impurities
The epitaxial growth process of a high symmetry surface occurs because adatoms meet and nucleate new islands, that eventually coalesce and complete atomic layers. During multilayer growth, nucleation usually takes place on top of terraces…
Mounding instability in a conserved growth from vapor is analysed within the framework of adatom kinetics on the growing surface. The analysis shows that depending on the local structure on the surface, kinetics of adatoms may vary, leading…
The capture numbers entering the rate equations (RE) for submonolayer film growth are determined from extensive kinetic Monte Carlo (KMC) simulations for simple representative growth models yielding point, compact, and fractal island…
Tissue fluidity regulates many critical biological processes, including embryonic development, wound healing, and cancer metastasis. In confluent epithelia, where cell packing fraction is effectively fixed, the prevailing paradigm…
Codeposition of impurities during the growth of a vicinal surface leads to an impurity concentration gradient on the terraces, which induces corresponding gradients in the mobility and the chemical potential of the adatoms. Here it is shown…
The conditions whereby epitaxy is achieved are commonly believed to be mostly governed by misfit strain. We report on a systematic investigation of growth and interface structure of single crystalline tungsten thin films on two different…
Topological defects are at the root of the large-scale organization of liquid crystals. In two-dimensional active nematics, two classes of topological defects of charges $\pm 1/2$ are known to play a major role due to active stresses.…
A model of submonolayer thin film growth is studied, where the attachment of atoms to island edges is hindered by an energy barrier. A novel behavior of the density of islands, N_s, is predicted as a function of flux F and temperature T.…
The equation of impurity diffusion due to formation, migration, and dissolution of the pairs "impurity atom - intrinsic point defect" taking into account the nonuniform distributions of nonequilibrium point defects and drift of the pairs in…
Effect of an anisotropic detachment on a heteroepitaxial island shape is studied by means of a kinetic Monte Carlo simulation of a square lattice gas model. Only with molecular deposition followed by surface diffusion, islands grow in a…
Scanning tunneling microscopy experiments show that the unstable growth morphology observed during molecular beam homoepitaxy on slightly vicinal Si(001) surfaces consists of straight step bunches. The instability occurs under step- flow…
We present a unified model of compound semiconductor growth based on kinetic Monte Carlo simulations in tandem with new experimental results that can describe and predict the mechanisms for the formation of various types of nanostructures…
The modelling of interface migration and the associated diffusion mechanisms at the nanoscale level is a challenging issue. For many technological applications ranging from nanoelectronic devices to solar cells, more knowledge of the…
A system of coupled chaotic bistable maps on a lattice with randomly distributed impurities is investigated as a model for studying the phenomenon of phase growth in nonuniform media. The statistical properties of the system are…
We investigate island formation during heteroepitaxial growth using an atomistic model that incorporates deposition, activated diffusion and stress relaxation. For high misfit the system naturally evolves into a state characterized by a…
Square lattice gas models for heteroepitaxial growth are studied by means of kinetic Monte Carlo simulations, in order to find a possible origin of anisotropic island shape observed in growth experiments of long organic molecules. When…
Growth of nanoclusters and nanopillars is considered in a model of surface deposition of building blocks (atoms) diffusionally transported from solution to the forming surface structure. Processes of surface restructuring are also accounted…
The epitaxy of MoO2 on c_plane sapphire substrates is examined. A theoretical approach, based on density functional theory calculations of the strain energy, allowed to predict the preferred layer/substrate epitaxial relationships. To test…
We studied the step dynamics during sublimation and growth in the presence of electromigration force acting on the adatoms. In the limit of fast surface diffusion and slow kinetics of atom attachment-detachment at the steps we formulate a…
Enhancing the mechanical properties of amorphous solids is crucial for material design, with microalloying being a common but not well-understood method. Using extensive molecular dynamics simulations, we investigate the effect of impurity…