Related papers: Metal-Insulator Transition in C60-Polymers
We have made a detailed temperature-dependent photoemission study of VO_2/TiO_2(001) thin films, which show a metal-insulator transition at \sim 300 K. Clean surfaces were obtained by annealing the films in an oxygen atmosphere. Spectral…
Self-consistent theory of electron localization in disordered systems is generalized for the case of interacting electrons. We propose and critically compare a number of possible self-consistency schemes which take into account the lowest…
We investigate the bias-induced insulator-metal transition in organic electronics devices, on the basis of the Su-Schrieffer-Heeger model combined with the non-equilibrium Green's function formalism. The insulator-metal transition is…
We use a random gap model to describe a metal-insulator transition in three-dimensional semiconductors due to doping and find a conventional phase transition, where the effective scattering rate is the order parameter. Spontaneous symmetry…
We have investigated the magnetic field-induced metal-insulator transition in the tau-phase organic conductors, which occurs in fields above 35 T, and below 14 K, by magnetization, thermoelectric, and pressure dependent transport methods.…
Aging effects in the relaxations of conductivity of a two-dimensional electron system in Si have been studied as a function of carrier density. They reveal an abrupt change in the nature of the glassy phase at the metal-insulator transition…
We discuss the metal-insulator transition of the spinless fermion model on the Kagom\'{e} lattice at 1/3-filling. The system is analyzed using exact diagonalization, the density-matrix renormalization group methods and the random phase…
The metal-insulator transition of the quarter-filled Hubbard model on triangular lattice is studied at the mean field level. We find a quasi-one dimensional metallic state with a collinear magnetic order competes closely with an insulating…
The charge transfer antiferromagnetic (T$_{N}$ =220 K) insulator EuNiO$_{3}$ undergoes, at ambient pressure, a temperature-induced metal insulator MI transition at T$_{MI}$=463 K. We have investigated the effect of pressure (up to p~20 GPa)…
A recently found metal-insulator transition in a model for cyclotron resonance in a two-dimensional periodic potential is investigated by means of spectral properties of the time evolution operator. The previously found dynamical signatures…
The Boson-Fermion model, describing a mixture of tightly bound electron pairs and quasi-free electrons hybridized with each other via a charge exchange term, is studied in the limit of infinite dimensions, using the Non-Crossing…
We calculate persistent current of one-dimensional rings of fermions neglecting the spin degrees of freedom considering only nearest-neighbor Coulomb interactions with different electron fillings in both ordered and disordered cases. We…
Charge-transfer (CT) exciton effects are investigated for the optical absorption spectra of crosslinked C60 systems by using the intermediate exciton theory. We consider the C60-dimers, and the two (and three) molecule systems of the…
It is inferred from bulk-sensitive muon Knight shift measurement for a Bi$_{1.76}$Pb$_{0.35}$Sr$_{1.89}$CuO$_{6+\delta}$ single-layer cuprate that metal-insulator (MI) transition (in the low temperature limit, $T\rightarrow0$) occurs at the…
We present a detailed study of the electronic and magnetic ground state properties of Fe$_{1-x}$Co$_{x}$Si using a combination of macroscopic and microscopic experimental techniques. From these experiments we quantitatively characterize the…
We study the effects of temperature on the band structure of the Bi$_2$Se$_3$ family of topological insulators using first-principles methods. Increasing temperature drives these materials towards the normal state, with similar…
We solve the Periodic Anderson model in the Mott-Hubbard regime, using Dynamical Mean Field Theory. Upon electron doping of the Mott insulator, a metal-insulator transition occurs which is qualitatively similar to that of the single band…
The critical electron density for the metal-insulator transition in a two-dimensional electron gas can be determined by two distinct methods: (i) a sign change of the temperature derivative of the resistance, and (ii) vanishing activation…
We review recent experimental results on the metal-insulator transition and low-density phases in strongly-interacting, low-disordered Si-based two-dimensional electron systems. Special attention is given to the metallic state in…
Electronic structures of the filled-skutterudite compounds PrRu$_4$P$_{12}$ and SmRu$_4$P$_{12}$, which undergo a metal-insulator transition (MIT) at $T_{\rm MI}$ = 60 K and 16 K, respectively, have been studied by means of optical…