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We present a tight-binding potential for transition metals, carbon, and transition metal carbides, which has been optimized through a systematic fitting procedure. A minimal basis, including the s, p electrons of carbon and the d electrons…

Finite-temperature calculations are relevant for rationalizing material properties yet they are computationally expensive because large system sizes or long simulation times are typically required. Circumventing the need for performing many…

An application of the tight binding approximation is presented for the description of electronic structure and interatomic force in magnetic iron, both pure and containing hydrogen impurities. We assess the simple canonical d-band…

Materials Science · Physics 2015-05-19 A. T. Paxton , C. Elsaesser

The electronic charge density plays a central role in determining the behavior of matter at the atomic scale, but its computational evaluation requires demanding electronic-structure calculations. We introduce an atom-centered,…

Parameters of the nonorthogonal tight-binding model for hydrocarbons are derived based on a criterion of the best agreement between the calculated and experimental values of bond lengths and binding energies for different molecules CnHm.…

Other Condensed Matter · Physics 2009-11-13 M. M. Maslov , A. I. Podlivaev , L. A. Openov

In this work, transferable empirical tight binding parameters of strained group IV and III-V semiconductors are generated from ab-initio calculations. The empirical tight binding parameters show good transferability when applied to strained…

Materials Science · Physics 2015-04-28 Yaohua P. Tan , Michael Povolotskyi , Tillmann Kubis , Timothy B. Boykin , Gerhard Klimeck

The linear combination of atomic orbitals (LCAO) is a standard method for studying solids and molecules, it is also known as the tight$-$binding (TB) method. In most of the implementations only the basis set and the coupling constants are…

Materials Science · Physics 2024-01-18 Graziâni Candiotto

For a previously published study of the titanium hcp (alpha) to omega (omega) transformation, a tight-binding model was developed for titanium that accurately reproduces the structural energies and electron eigenvalues from all-electron…

Materials Science · Physics 2008-07-24 D. R. Trinkle , M. D. Jones , R. G. Hennig , S. P. Rudin , R. C. Albers , J. W. Wilkins

Heisenberg-type spin models in the limit of a low number of excitations are useful tools to study basic mechanisms in strongly correlated and magnetic systems. Many of these mechanisms can be experimentally tested using ultracold atoms.…

Quantum Physics · Physics 2013-12-09 Gian Luca Giorgi , Thomas Busch

The AB s-valent dimer is used to analyse bond formation and charge transfer within the tight-binding (TB) approximation. In this way a physical interpretation of the electronic structure and binding energy within density functional theory…

Materials Science · Physics 2011-12-21 D. G. Pettifor

We present the molecular hyperdynamics algorithm and its implementation to the nonorthogonal tight-binding model NTBM and the corresponding software. Due to its multiscale structure, the proposed approach provides the long time scale…

We discuss how to construct a tight binding model Hamiltonan for the simplest possible solid, composed of hydrogen-like atoms. A single orbital per atom is not sufficient because the on-site electron-electron repulsion mixes in higher…

Strongly Correlated Electrons · Physics 2014-09-09 J. E. Hirsch

Semi-Empirical Tight Binding (TB) is known to be a scalable and accurate atomistic representation for electron transport for realistically extended nano-scaled semiconductor devices that might contain millions of atoms. In this paper an…

Materials Science · Physics 2015-06-18 Ganesh Hegde , Michael Povolotskyi , Tillmann Kubis , Timothy Boykin , Gerhard Klimeck

Atomic scale simulations at finite temperature are an ideal approach to study the thermodynamic properties of magnetic transition metals. However, the development of interatomic potentials explicitly taking into account magnetic variables…

Silicon oxycarbides show outstanding versatility due to their highly tunable composition and microstructure. Consequently, a key challenge is a thorough knowledge of structure-property relations in the system. In this work, we fit an atomic…

Materials Science · Physics 2024-03-18 Niklas Leimeroth , Jochen Rohrer , Karsten Albe

A recent tight-binding scheme provides a method for extending the results of first principles calculations to regimes involving $10^2 - 10^3$ atoms in a unit cell. The method uses an analytic set of two-center, non-orthogonal tight-binding…

mtrl-th · Physics 2008-02-03 Michael J. Mehl , Dimitrios A. Papaconstantopoulos

Solid state physics deals with systems composed of atoms with strongly bound electrons. The tunneling probability of each electron is determined by interactions that typically extend to neighboring sites, as their corresponding wave…

Materials Science · Physics 2019-11-27 F. Ramírez-Ramírez , E. Flores-Olmedo , G. Báez , E. Sadurní , R. ~A. Méndez-Sánchez

We present a tight-binding parametrization for penta-graphene that correctly describes its electronic band structure and linear optical response. The set of parameters is validated by comparing to ab-initio density functional theory…

Materials Science · Physics 2020-12-25 Sergio Bravo , J. D. Correa , Leonor Chico , M. Pacheco

The formal link between the linear combination of atomic orbitals approach to density functional theory and two-center Slater-Koster tight-binding models is used to derive an orthogonal $d$-band tight-binding model for iron with only two…

Materials Science · Physics 2015-03-19 Georg K. H. Madsen , Eunan J. McEniry , Ralf Drautz

The simulation of charge transport in ultra-scaled electronic devices requires the knowledge of the atomic configuration and the associated potential. Such "atomistic" device simulation is most commonly handled using a tight-binding…

Mesoscale and Nanoscale Physics · Physics 2019-10-02 Maarten L. Van de Put , Massimo V. Fischetti , William G. Vandenberghe
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