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Electrical manipulation of magnetism via spin-orbit torques (SOTs) promises efficient spintronic devices. In systems comprising magnetic insulators and heavy metals, SOTs have started to be investigated only recently, especially in systems…

Spin-orbit torque (SOT) enables ultra-fast, energy-efficient magnetization switching, making it a promising mechanism for introducing MRAMs for cache memory applications. However, current SOT-MRAM devices face write efficiency limitations,…

We study the spin-orbit torques (SOTs) in Co/Cu/Co magnetic trilayers based on first-principles density-functional theory calculations in the case where the applied electric field lies in-plane, i.e., parallel to the interfaces. We assume…

Mesoscale and Nanoscale Physics · Physics 2018-07-31 Frank Freimuth , Stefan Blügel , Yuriy Mokrousov

To date, the most widely-studied quantum anomalous Hall insulator (QAHI) platform is achieved by dilute doping of magnetic ions into thin films of the alloyed tetradymite topological insulator (TI) (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ (BST). In…

Deterministic magnetization switching using spin-orbit torque (SOT) has recently emerged as an efficient means to electrically control the magnetic state of ultrathin magnets. The SOT switching still lacks in oscillatory switching…

We consider a thin film of a topological insulator (TI) sandwiched between two ferromagnetic (FM) layers. The system is additionally under an external gate voltage. The surface electron states of TI are magnetized due to the magnetic…

Mesoscale and Nanoscale Physics · Physics 2023-09-19 Piotr Pigoń , Anna Dyrdał

Topological insulators have attracted great interest as generators of spin-orbit torques (SOTs) in spintronic devices. Bi\textsubscript{1-x}Sb\textsubscript{x} is a prominent topological insulator that has a high charge-to-spin conversion…

Materials Science · Physics 2023-10-06 Federico Binda , Stefano Fedel , Santos Francisco Alvarado , Paul Noël , Pietro Gambardella

We study inserting Co layer thickness-dependent spin transport and spin-orbit torques (SOTs) in the Pt/Co/Py trilayers by spin-torque ferromagnetic resonance. The interfacial perpendicular magnetic anisotropy energy density ($K_s =…

Mesoscale and Nanoscale Physics · Physics 2022-09-07 Wenqiang Wang , Kaiyuan Zhou , Xiang Zhan , Zui Tao , Qingwei Fu , Like Liang , Zishuang Li , Lina Chen , Chunjie Yan , Haotian Li , Tiejun Zhou , Ronghua Liu

Motivated by recent experiments observing a large antidamping spin-orbit torque (SOT) on the surface of a three-dimensional topological insulator, we investigate the origin of the current-induced SOT beyond linear-response theory. We find…

Mesoscale and Nanoscale Physics · Physics 2022-03-02 Yong-Long Zhou , Hou-Jian Duan , Yong-jia Wu , Ming-Xun Deng , Lan Wang , Dimitrie Culcer , Rui-Qiang Wang

Spin orbit torque (SOT) provides an efficient way of generating spin current that promises to significantly reduce the current required for switching nanomagnets. However, an in-plane current generated SOT cannot deterministically switch a…

Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear…

Materials Science · Physics 2016-05-04 Shunsuke Fukami , Chaoliang Zhang , Samik DuttaGupta , Hideo Ohno

Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it does not require high-density…

Materials Science · Physics 2019-02-19 Yang Liu , Bing Zhou , Jian-Gang Zhu

The emergent two-dimensional (2D) ferromagnetic materials with unique magnetic properties have endowed great potential for next-generation spintronic devices with extraordinary merits of high flexibility, easy controllability, and high…

Ferrimagnetic insulators (FiMI) have been intensively used in microwave and magneto-optical devices as well as spin caloritronics, where their magnetization direction plays a fundamental role on the device performance. The magnetization is…

Magnetization switching by current-induced spin-orbit torques (SOTs) is of great interest due to its potential applications for ultralow-power memory and logic devices. In order to be of technological interest, SOT effects need to switch…

We propose magnetic second-order topological insulators (SOTIs). First, we study a three-dimensional model. It is pointed out that the previously proposed topological hinge insulator has actually surface states along the [001] direction in…

Mesoscale and Nanoscale Physics · Physics 2018-04-25 Motohiko Ezawa

Magnetic topological states refer to a class of exotic phases in magnetic materials with their non-trivial topological property determined by magnetic spin configurations. An example of such states is the quantum anomalous Hall (QAH) state,…

Mesoscale and Nanoscale Physics · Physics 2026-04-28 Yi-Fan Zhao , Ruoxi Zhang , Zi-Ting Sun , Ling-Jie Zhou , Deyi Zhuo , Zi-Jie Yan , Hemian Yi , Ke Wang , Moses H. W. Chan , Chao-Xing Liu , K. T. Law , Cui-Zu Chang

The quantum spin Hall effect has been predicted in twisted homobilayer transition metal dichalcogenides (TMDs) owing to the layer-pseudospin magnetic field. Recently, experimental observations have also confirmed such topological states of…

Mesoscale and Nanoscale Physics · Physics 2025-08-08 Hao He , Zhao Gong , Qing-Jun Tong , Dawei Zhai , Wang Yao , Xing-Tao An

Magnetic topological insulators (MTI) constitute a novel class of materials where the topologically protected band structure coexists with long-range ferromagnetic order, which can lead to the breaking of time-reversal symmetry (TRS),…

We propose a universal practical approach to realize magnetic second-order topological insulator (SOTI) materials, based on properly breaking the time reversal symmetry in conventional (first-order) topological insulators. The approach…

Materials Science · Physics 2020-08-05 Cong Chen , Zhida Song , Jian-Zhou Zhao , Ziyu Chen , Zhi-Ming Yu , Xian-Lei Sheng , Shengyuan A. Yang