Related papers: High Performance TiO2 Ferroelectric Field Effect T…

Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall insulators are being considered as advanced logic transistors due to their potentially superior performance originating from the dissipationless edge…

Supplementary Information to arXiv:0810.4466: 1. Characterizations of Pb(Zr_0.2Ti_0.8)O_3 (PZT) films. 2. Substrate preparation before the exfoliation of graphene. 3. The band structure of FLG. 4. Dielectric constant measurements of PZT. 5.…

Van der Waals heterostructures are the ideal material platform for tunnel field effect transistors (TFETs) because a band-to-band tunneling (BTBT) dominant current is feasible at room temperature (RT) due to ideal, dangling bond free…

RuO$_{2}$ has been proposed as the prototypical altermagnetic material. However, several reports have recently questioned its intrinsic magnetic ordering, leading to conflicting findings, especially in thin film heterostructures pointing to…

We study the impact of different interlayers and ferroelectric materials on charge trapping during the endurance fatigue of Si FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) gate stack. We have fabricated FeFET devices with different…

InAs on Insulator (InAsOI) has been recently demonstrated as a promising platform to develop hybrid semiconducting-superconducting Josephson Junctions (JJs) and Josephson Field Effect Transistors (JoFETs). The InAsOI consists of an InAs…

Since the discovery of ferroelectricity in HfO$_2$ thin films, significant research has focused on Zr-doped HfO$_2$ and solid solution (Hf,Zr)O$_2$ thin films. Functional properties can be further tuned via multilayering, however, this…

This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area…

Nano-membrane tri-gate beta-gallium oxide (\b{eta}-Ga2O3) field-effect transistors (FETs) on SiO2/Si substrate fabricated via exfoliation have been demonstrated for the first time. By employing electron beam lithography, the minimum-sized…

Here we report the properties of field-effect transistors based on few layers of chemical vapor transport grown alpha- MoTe_2 crystals mechanically exfoliated onto SiO_2. We performed field-effect and Hall mobility measurements, as well as…

We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with…

Topology is a key ingredient driving the emergence of quantum devices. Topological field-effect transistor (TFET) has been proposed to outperform the conventional FET by replacing the ON state with topology-protected quantized conductance,…

The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue…

Wide bandgap oxide semiconductors are very promising channel candidates for next-generation electronics due to their large-area manufacturing, high-quality dielectrics, low contact resistance, and low leakage current. However, the absence…

We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by the physical gate oxide thickness and not the effective oxide…

The carrier mobility \mu of few-layer graphene (FLG) field-effect transistors increases ten-fold when the SiO_2 substrate is replaced by single-crystal epitaxial Pb(Zr_0.2Ti_0.8)O_3 (PZT). In the electron-only regime of the FLG, \mu reaches…

Vertical field effect transistors (VFETs) show many advantages such as high switching speed, low operating voltage, low power consumption, and miniaturization over lateral FETs. However, VFET still faces the main challenges of high…

Atomically thin transition metal dichalcogenides (TMDs) are promising candidates for next-generation transistor channels due to their superior scaling properties. However, the integration of ultra-thin gate dielectrics remains a challenge,…

Heterostructures based on two dimensional (2D) materials offer the possibility to achieve synergistic functionalities which otherwise remain secluded by their individual counterparts. Herein ferroelectric polarization switching in…

In this paper we proclaim excellent variation control in Hf$_{0.5}$Zr$_{0.5}$O$_2$ based ferroelectric films obtained by germination of large ferroelectric domain via extended duration of thermal annealing. 10nm thick…