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The rapidly rising fields of spintronics and quantum information science have led to a strong interest in developing the ability to coherently manipulate electron spins. Electron spin resonance (ESR) is a powerful technique to manipulate…
A new three-phase hybrid-excited multi-tooth switched reluctance motor with embedded permanent magnets is proposed, capable of achieving higher torque density for transportation electrification applications. Operating principles and design…
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…
Using micromagnetics we demonstrate that the r.f. field produced by a spin valve can be used to reverse the magnetization in a magnetic nanoparticle. The r.f. field is generated using a current that specifically excites a uniform spin wave…
We demonstrated an electric field controlled exchange bias (EB) effect accompanied with unipolar resistive switching behavior in the Si/SiO2/Pt/Co/NiO/Pt device. By applying certain voltages, the device displays obvious EB in…
Applications of magnetic memory devices greatly benefit from ultra-fast, low-power switching. Here we propose how this can be achieved efficiently in a nano-sized synthetic antiferromagnet by using perpendicular-to-the-plane…
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…
Well controlled and highly stable magnetic fields are desired for a wide range of applications in physical research, including quantum metrology, sensing, information processing, and simulation. Here we introduce a low-cost hybrid assembly…
Spintronics is an approach to electronics in which the spin of the electrons is exploited to control the electric resistance R of devices. One basic building block is the spin-valve, which is formed if two ferromagnetic electrodes are…
We propose, theoretically, a new type of quantum field effect transistor that operates purely on the flow of spin current in the absence of charge current. This spin field effect transistor (SFET) is constructed without any magnetic…
Recent advances in scanning tunneling microscopy have enabled quantum-coherent control of single surface spins via all-electric electron spin resonance (ESR). Such control requires magnetoelectric coupling, since spin resonance is a…
Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…
A spin version of transistor, where magnetism is used to influence electrical behaviors of the semiconductor, has been a long-pursued device concept in spintronics. In this work, we experimentally study a field-effect transistor with CrSBr,…
Using an electric field instead of an electric current (or a magnetic field) to tailor the electronic properties of magnetic materials is promising for realizing ultralow energy-consuming memory devices because of the suppression of Joule…
This paper focuses on designing new motors with high torque density, which is crucial for applications ranging from electric vehicles to robotics. We propose a double-teeth C-core switched reluctance motor with hybrid excitation,…
The authors show that the magnetization of a magnetostrictive/piezoelectric multiferroic single-domain shape-anisotropic nanomagnet can be switched with very small voltages that generate strain in the magnetostrictive layer. This can be the…
The ability to control the magnetization switching in nanoscale devices is a crucial step for the development of fast and reliable techniques to store and process information. Here we show that the switching dynamics can be controlled…
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…
While superconductors are highly attractive for energy-efficient computing, fundamental limitations in their logic circuit integration have hindered scaling and led to increased energy consumption. We therefore propose and experimentally…
Understanding the magnetic field sensitivity of Transition Edge Sensors (TESs) is vital in optimising the configuration of any magnetic shielding as well as the design of the TESs themselves. An experimental system has been developed to…