Related papers: A nanoionic diode: Equilibrium rectifying junction…
An atomistic insight into potential barrier formation and band bending at the interface between a metal and an n-type semiconductor is achieved by ab initio simulations and model analysis of a prototype Schottky diode, i.e., niobium doped…
Back-action refers to a response that retro-acts on a system to tailor its properties with respect to an external stimulus. This effect is at the heart of many electronic devices such as amplifiers, oscillators, and sensors. Here, we…
The spin Seebeck effect is studied across a charge insulating magnetic junction, in which thermal-spin conjugate transport is assisted by the exchange interactions between the localized spin in the center and electrons in metallic leads. We…
This work reports the electrical characteristics comparison study between Cr2O3 and NiOx based heterojunction diodes (HJD) on halide vapor phase epitaxy (HVPE) grown \b{eta}-Ga2O3 epitaxial layers. Both as-fabricated Cr2O3 and NiOx HJDs…
Non-reciprocal electronic transport in a material occurs if both time reversal and inversion symmetries are broken. The superconducting diode effect (SDE) is an exotic manifestation of this type of behavior where the critical current for…
We show that a current-carrying coherent electron conductor can be treated as effective bosonic energy reservoir involving different types of electron-hole pair excitation. For weak electron-boson coupling, hybrid energy transport between…
Superconducting systems may display different types of nonequilibrium states depending on the specific constraints imposed for measurement. We probe current-voltage relations of three-dimensional superconducting films by allowing finite…
Self-assembled semiconductor quantum dots show remarkable optical and spin coherence properties, which have lead to a concerted research effort examining their potential as a quantum bit for quantum information science1-6. Here, we present…
Superconducting systems that simultaneously lack space-inversion and time-reversal symmetries have recently been the subject of a flurry of experimental and theoretical research activities. Their ability to carry supercurrents with…
We present an analysis of the transient electronic and transport properties of a nanojunction in the presence of electron-electron and electron-phonon interactions. We introduce a novel numerical approach which allows for an efficient…
NiO/ZnO-based thin films, including single-layer and heterostructure configurations, were synthesized to investigate the influence of stacking order on their electrochemical performance for supercapacitor applications. To improve the…
Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching…
One of the challenges faced by optical platforms for quantum technologies is the implementation of (ultimately) a transistor. The functionality that is hard to achieve is rectification: having the beam propagating in one direction…
We report the electrochemical performance and diffusion kinetics of a newly designed NASICON type Na$_{3.3}$Mn$_{1.2}$Ti$_{0.75}$Mo$_{0.05}$(PO$_4$)$_3$/C composite material as a cathode for cost-effective sodium-ion batteries. A novel…
We study charge transport in voltage-biased single-channel junctions involving helical superconductors with finite Cooper pair momentum. For a Josephson junction, the equilibrium current-phase relation shows a superconducting diode effect:…
Nanoscale electronic devices are of great interest for all kinds of applications like switching, energy conversion and sensing. The objective of this chapter, however, is not to discuss specific devices or applications. Rather it is to…
The superconducting diode effect may exist in bulk systems as well as in junctions when time-reversal and inversion symmetries are simultaneously broken. Magnetization gradients and textures satisfy both requirements and therefore also…
Resistive switching in thin films has been widely studied in a broad range of materials. Yet the mechanisms behind electroresistive switching have been persistently difficult to decipher and control, in part due to their non-equilibrium…
Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and…
Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating…