Related papers: A nanoionic diode: Equilibrium rectifying junction…
In this letter, we present a kilovolt-class \b{eta}-Ga2O3 vertical trench Schottky barrier diode with a field plate incorporating narrow fin width (Wfin) structures of sub-micron dimensions. We used a nanolaminate dielectric comprising a…
Directed ion transport in liquid electrolyte solutions underlies many phenomena in Nature and industry. While Nature has devised structures that drive continuous ion flow without Faradaic redox reactions, artificial analogs do not exist.…
The demand for high-performance electromechanical resonators is ever-growing across diverse applications, ranging from sensing and time-keeping to advanced communication devices. Among the electromechanical materials being explored,…
Nanophotonic devices seek to generate, guide, and/or detect light using structures whose nanoscale dimensions are closely tied to their functionality. Semiconducting nanowires, grown with tailored optoelectronic properties, have been…
Rapid and reproducible assembly of aligned nanostructures on a wafer-scale is a crucial, yet one of the most challenging tasks in the incorporation of nanowires into integrated circuits. We present the synthesis of a periodic nanochannel…
Nanorings asymmetrically connected to wires show different kinds of quantum interference phenomena under sudden excitations and in steady current conditions. Here we contrast the transient current caused by an abrupt bias to the magnetic…
We report a new structure, called the Shielded Ohmic Contact (ShOC) rectifier which utilizes trenches filled with a high barrier metal to shield an Ohmic contact during the reverse bias. When the device is forward biased, the Ohmic contact…
The proper understanding of semiconductor devices begins at the metal-semiconductor interface. The metal/semiconductor interface itself can also be an important device, as Schottky junctions often forms when the doping in the semiconductors…
Dynamical structural defects exist naturally in a wide variety of solids. They fluctuate temporally, and hence can deteriorate the performance of many electronic devices. Thus far, the entities of such dynamic objects have been identified…
Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature.…
The temporary resistance triggered by phase slip will result in the switching of superconductor nanowire to a permanent normal state, decreasing the switching current. In this letter, we propose an improved impedance matching circuit that…
Asymmetric current--voltage ($I(V)$) curves, known as the diode or rectification effect, in one--dimensional electronic conductors can have their origin from scattering off a single asymmetric impurity in the system. We investigate this…
Strong coupling between electronic and mechanical degrees of freedom is a basic requirement for the operation of any nanoelectromechanical device. In this Review we consider such devices and in particular investigate the properties of small…
Nonlinear elements in a rectifying circuit can be used to harvest energy from thermal fluctuations either steadily or transitorily. We study an energy harvesting system comprising a small variable capacitor (e.g., free standing graphene)…
Using a focused He$^+$ beam for nanopatterning and writing of Josephson barriers we fabricated specially shaped Josephson junctions of in-line geometry in YBa$_2$Cu$_3$O$_7$ thin film microbridges with an asymmetry ratio of critical…
The field-free and highly efficient diodes with the nonreciprocity of supercurrent are believed to be the core block of the superconducting computing devices without dissipation. In this paper, we propose a Josephson diode based upon…
We present the optoelectronic characterization of two graphene/silicon Schottky junctions, fabricated by transferring CVD-graphene on flat and nanotip-patterned n-Si substrates, respectively. We demonstrate record photo responsivity,…
Armchair nanotubes of MoS2 and WS2 offer a sizeable band gap, with the advantage of a one dimensional (1D) electronic material, but free from edge roughness and thermodynamic instability of nanoribbons. Use of such semiconducting MX2 (MoS2,…
For carbon nanotube transistors, as for graphene, the electrical contacts are a key factor limiting device performance. We calculate the device characteristics as a function of nanotube diameter and metal workfunction. Although the on-state…
Molecular electronics originally proposed that small molecules sandwiched between electrodes would accomplish electronic functions and enable to reach ultimate scaling. However, so far, functional molecular devices have been only…