Related papers: Development and Performance Study of Vertical GaN …
Geant4-based simulations of the energy deposited by electrons in various materials are quantitatively compared to high precision calorimetric measurements taken at Sandia Laboratories. The experimental data concern electron beams of energy…
We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in such a way that the application of positive or negative bias…
We studied the persistent photoconductivity (PPC) effect in AlGaN/AlN/GaN heterostructures with two different Al-compositions (x=0.15 and x=0.25). The two-dimensional electron gas formed at the AlN/GaN heterointerface was characterized by…
We report on unique features of ultra-thin GaN/AlN quantum wells and demonstrate a new field emission device for human-safe disinfection with an external quantum efficiency of 18% and superior reliability, as compared to far-UVC LEDs. We…
This work aims to present the current state of simulations of electroluminescence (EL) produced in gas-based detectors with special interest for NEXT --- Neutrino Experiment with a Xenon TPC. NEXT is a neutrinoless double beta decay…
We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects of the diode design, current and temperature. The as-grown and regrown diodes, with and without surface treatment have been studied. The noise…
Density functional theory simulations were used to obtain physical properties of GaN/AlN system. Combination of these two compounds into multiquantum well (MQW) structure will induce strong electrostatic effect leading to emergence of high…
Light emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, medical equipment, and other fields. However, their energy efficiency is still below expectations in many…
A graphene-optimized silicon carbide PIN detector was fabricated and its radiation tolerance under X-ray irradiation of 160 keV was evaluated. Its electrical properties, charge collection performance and time resolution of beta-particles…
A large 4$\pi$ array of charged particle detectors has been developed at Variable Energy Cyclotron Centre to facilitate high resolution charged particle reaction and spectroscopy studies by detecting event-by-event the charged reaction…
We propose an alternative approach for the detection of fast neutrons in the energy range from 10-4 to 5 MeV based on 10B-RPCs (hybrid double-gap Resistive Plate Chambers with 10B4C neutron converters) surrounded by a polyethylene…
GaAs Schottky diode detectors have been fabricated upon Low Pressure Vapour Phase Epitaxial GaAs. The devices were characterised before and after a $1.25 \times 10^{14}$~cm$^{-2}$ 24GeV/c proton fluence. The as fabricated Ti-GaAs barrier…
Low-Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer that provides moderate internal signal amplification. One recent challenge in the use of LGADs, studied by several research groups, is…
We have developed MICROMEGAS (MICRO MEsh GASeous) detectors for detecting {\alpha} particles emitted from an 241-Am standard source. The voltage applied to the ionization region of the detector is optimized for stable operation at room…
The General Antiparticle Spectrometer (GAPS) is an Antarctic balloon-borne mission to indirectly search for dark matter through sensitive observation of cosmic antiparticles. The first flight is planned for late 2021. GAPS is the first…
Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace photomultiplier tubes (PMT) for weak light detection. However, in conventional APDs, a large portion of carrier energy drawn from the electric…
Recently theorized hybrid II-IV-N{_2} / III-N heterostructures, based on current commercialized (In,Ga)N devices, are predicted to significantly advance the design space of highly efficient optoelectronics in the visible spectrum, yet there…
Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form carrier traps and non-radiative recombination centers. Here,…
Micro-pattern gas detectors, such as the Gas Electron Multiplier (GEM) and the Micromegas need narrow high density anode readout elements to achieve good spatial resolution. A high-density anode readout would require an unmanageable number…
We describe the operation of two GaN-based diode lasers for the laser spectroscopy of gallium at 403 nm and 417 nm. Their use in an external cavity configuration enabled the investigation of absorption spectroscopy in a gallium hollow…