Related papers: Multi-photon schemes for mid-infrared detection
An ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface as an interdigitated transducer (IDT) is characterized under optical stimulus. The 2DEG-IDT photodetector exhibits a…
Two-color side-view probing of light-matter interaction from minute focal volume of a tightly focused fs-laser pump pulse reveals charge dynamics with high 0.9 micrometers optical resolution and approximately ~20 fs temporal resolution in…
Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 $\mu$m wavelength window with picosecond response…
In virtual-state spectroscopy, information about the energy-level structure of an arbitrary sample is retrieved by Fourier transforming sets of measured two-photon absorption probabilities of entangled photon pairs where the degree of…
Entangled photons provide non-classical correlations that enable measurement sensitivities beyond classical limits, scalable fault-tolerant quantum computation, and fundamentally secure quantum communication, making them a foundational…
We show that two-photon absorption (TPA) in Rubidium atoms can be greatly enhanced by the use of a hollow-core photonic bandgap fiber. We investigate off-resonant, degenerate Doppler-free TPA on the 5S1/2 - 5D5/2 transition and observe 1%…
We apply input-output theory with quantum pulses [AH Kiilerich, K M\o lmer, Phys. Rev. Lett. {\bf 123}, 123604 (2019)] to a model of a new type of two-photon detector consisting of one molecule that can detect two photons arriving…
Two-photon excitation in the near-infrared (NIR) of colloidal nanocrystalline silicon quantum dots (nc-SiQDs) with photoluminescence also in the NIR has the potential to open up new opportunities in the field of deep biological imaging.…
We considered intersubband electron transitions in an array of one-dimensional chains of spherical quantum dots in the GaAs/Al$_{x}$Ga$_{1-x}$As semiconductor system. The absorption coefficient caused by these transitions was calculated…
We present a scheme for an integrated four-wave mixing source of narrow-band path-entangled photon pairs with efficient spatial pump self-rejection. The scheme is based on correlated loss in a system of waveguides in Kerr nonlinear media.…
In this work we investigate the probabilities of detecting single- and multi-photon coherent states on InGaAs/InP sine-gated and free-run single-photon avalanche diodes. As a result, we conclude that multi-photon state detection cannot be…
Intermediate band solar cells (IBSCs) pursue the increase in efficiency by absorbing below-bandgap energy photons while preserving the output voltage. Experimental IBSCs based on quantum dots have already demonstrated that both…
This article presents a novel approach for designing dual-band absorbers based on graphene and metallic metasurfaces for terahertz and mid-infrared regimes, respectively. The absorbers are composed of a two-dimensional (2D) array of square…
We present the model of an ultrasensitive mid-infrared (mid-IR) photodetector operating in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) domains consisting of a hybrid heterostructure made of nanopatterned graphene…
Nonlinear frequency conversion plays a crucial role in advancing the functionality of next-generation optical systems. Portable metrology references and quantum networks will demand highly efficient second-order nonlinear devices, and the…
We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial…
Unlike cubic GeSn, which requires a high Sn concentration to undergo an indirect-to-direct bandgap transition, lonsdaleite (2H) germanium is an intrinsic direct-gap semiconductor. We employ first-principles density functional theory to…
The new generation of two-dimensional (2D) materials has shown a broad range of applications for optical and electronic devices. Understanding the properties of these materials when integrated with the more traditional three-dimensional…
Pumping n-type GaAs and InSb with ultrafast THz pulses having intensities higher than 150 MW/cm2 shows strong free carrier absorption saturation at temperatures of 300 K and 200 K respectively. If the energy imparted to the carriers exceeds…
Optical frequency-comb-based-high-resolution spectrometers offer enormous potential for spectroscopic applications. Although various implementations have been demonstrated, the lack of suitable mid-infrared comb sources has impeded…